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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 12 — Jun. 9, 2008
  • pp: 8748–8754

Broadband and omnidirectional antireflection employing disordered GaN nanopillars

C. H. Chiu, Peichen Yu, H. C. Kuo, C. C. Chen, T.C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang  »View Author Affiliations

Optics Express, Vol. 16, Issue 12, pp. 8748-8754 (2008)

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Disordered GaN nanopillars of three different heights: 300, 550, and 720 nm are fabricated, and demonstrate broad angular and spectral anti-reflective characteristics, up to an incident angle of 60° and for the wavelength range of λ=300–1800nm. An algorithm based on a rigorous coupled-wave analysis (RCWA) method is developed to investigate the correlations between the reflective characteristics and the structural properties of the nanopillars. The broadband and omnidirectional antireflection arises mainly from the refractive-index gradient provided by nanopillars. Calculations show excellent agreement with the measured reflectivities for both s- and p- polarizations.

© 2008 Optical Society of America

OCIS Codes
(310.1210) Thin films : Antireflection coatings
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.6628) Thin films : Subwavelength structures, nanostructures

ToC Category:
Thin Films

Original Manuscript: February 28, 2008
Revised Manuscript: March 29, 2008
Manuscript Accepted: March 31, 2008
Published: May 30, 2008

C. H. Chiu, Peichen Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, "Broadband and omnidirectional antireflection employing disordered GaN nanopillars," Opt. Express 16, 8748-8754 (2008)

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