High speed hybrid silicon evanescent electroabsorption modulator
Optics Express, Vol. 16, Issue 13, pp. 9936-9941 (2008)
http://dx.doi.org/10.1364/OE.16.009936
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Abstract
A new way to make high speed modulators using Si waveguides is demonstrated. The hybrid silicon evanescent electroabsorption modulator with offset AlGaInAs quantum wells has an extinction ratio over 10dB and modulation bandwidth of 10GHz. The modulator has a clean open eye at 10Gb/s with sub-volt drive.
© 2008 Optical Society of America
OCIS Codes
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators
(250.4110) Optoelectronics : Modulators
ToC Category:
Optoelectronics
History
Original Manuscript: May 20, 2008
Revised Manuscript: June 13, 2008
Manuscript Accepted: June 16, 2008
Published: June 20, 2008
Citation
Ying-hao Kuo, Hui-Wen Chen, and John E. Bowers, "High speed hybrid silicon evanescent electroabsorption modulator," Opt. Express 16, 9936-9941 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-13-9936
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