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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 14 — Jul. 7, 2008
  • pp: 10549–10556

GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength

Cheng-Yin Wang, Liang-Yi Chen, Cheng-Pin Chen, Yun-Wei Cheng, Min-Yung Ke, Min-Yann Hsieh, Han-Ming Wu, Lung-Han Peng, and JianJang Huang  »View Author Affiliations

Optics Express, Vol. 16, Issue 14, pp. 10549-10556 (2008)

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A practical process to fabricate InGaN/GaN multiple quantum well light emitting diodes (LEDs) with a self-organized nanorod structure is demonstrated. The nanorod array is realized by using nature lithography of surface patterned silica spheres followed by dry etching. A layer of spin-on-glass (SOG), which intervening the rod spacing, serves the purpose of electric isolation to each of the parallel nanorod LED units. The electroluminescence peak wavelengths of the nanorod LEDs nearly remain as constant for an injection current level between 25mA and 100mA, which indicates that the quantum confined stark effect is suppressed in the nanorod devices. Furthermore, from the Raman light scattering analysis we identify a strain relaxation mechanism for lattice mismatch layers in the nanostructure.

© 2008 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Optical Design and Fabrication

Original Manuscript: May 19, 2008
Revised Manuscript: June 19, 2008
Manuscript Accepted: June 20, 2008
Published: June 30, 2008

Cheng-Yin Wang, Liang-Yi Chen, Cheng-Pin Chen, Yun-Wei Cheng, Min-Yung Ke, Min-Yann Hsieh, Han-Ming Wu, Lung-Han Peng, and JianJang Huang, "GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength," Opt. Express 16, 10549-10556 (2008)

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