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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 14 — Jul. 7, 2008
  • pp: 10849–10857

Effect of active-layer structures on temperature characteristics of InGaN blue laser diodes

Han-Youl Ryu and Kyoung-Ho Ha  »View Author Affiliations

Optics Express, Vol. 16, Issue 14, pp. 10849-10857 (2008)

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We investigate temperature characteristics of 445-nm-emitting InGaN blue laser diodes (LDs) with several types of active-layer structures. The double quantum-well (QW) LD structures having an n-type doped barrier show negative or very high characteristic temperature depending on the barrier In composition. On the contrary, the double QW structures having an undoped barrier and the single QW structure show normal temperature dependence of LD characteristics. From the simulation of carrier density and optical gain, it is found that the anomalous temperature characteristics of blue LDs are closed related to the inhomogeneous hole distribution between QWs due to the low hole mobility of InGaN materials.

© 2008 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.6810) Lasers and laser optics : Thermal effects
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Lasers and Laser Optics

Original Manuscript: May 21, 2008
Revised Manuscript: June 30, 2008
Manuscript Accepted: June 30, 2008
Published: July 3, 2008

Han-Youl Ryu and Kyoung-Ho Ha, "Effect of active-layer structures on temperature characteristics of InGaN blue laser diodes," Opt. Express 16, 10849-10857 (2008)

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