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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 15 — Jul. 21, 2008
  • pp: 11513–11518

High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding

Long Chen, Po Dong, and Michal Lipson  »View Author Affiliations

Optics Express, Vol. 16, Issue 15, pp. 11513-11518 (2008)

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We demonstrate germanium photodetectors integrated on submicron silicon waveguides fabricated with a low temperature (≤ 400°C) wafer bonding and ion-cut process. The devices shows a low dark current of ∼100 nA, a fiber accessed responsivity of > 0.4 A/W and an estimated quantum efficiency of above 90%.

© 2008 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(200.4650) Optics in computing : Optical interconnects
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:

Original Manuscript: May 5, 2008
Revised Manuscript: June 25, 2008
Manuscript Accepted: July 11, 2008
Published: July 17, 2008

Long Chen, Po Dong, and Michal Lipson, "High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding," Opt. Express 16, 11513-11518 (2008)

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