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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 15 — Jul. 21, 2008
  • pp: 11519–11524

Absolute sensitivity calibration of extreme ultraviolet photoresists

Patrick P. Naulleau, Eric M. Gullikson, Andy Aquila, Simi George, and Dimitra Niakoula  »View Author Affiliations

Optics Express, Vol. 16, Issue 15, pp. 11519-11524 (2008)

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One of the major challenges facing the commercialization of extreme ultraviolet (EUV) lithography remains simultaneously achieving resist sensitivity, line-edge roughness, and resolution requirement. Sensitivity is of particular concern owing to its direct impact on source power requirements. Most current EUV exposure tools have been calibrated against a resist standard with the actual calibration of the standard resist dating back to EUV exposures at Sandia National Laboratories in the mid 1990s. Here we report on an independent sensitivity calibration of two baseline resists from the SEMATECH Berkeley MET tool performed at the Advanced Light Source Calibrations and Standards beamline. The results show the baseline resists to be approximately 1.9 times faster than previously thought based on calibration against the long standing resist standard.

© 2008 Optical Society of America

OCIS Codes
(110.5220) Imaging systems : Photolithography
(260.7200) Physical optics : Ultraviolet, extreme

ToC Category:
Imaging Systems

Original Manuscript: May 19, 2008
Revised Manuscript: June 30, 2008
Manuscript Accepted: July 1, 2008
Published: July 18, 2008

Patrick P. Naulleau, Eric M. Gullikson, Andrew Aquila, Simi George, and Dimitra Niakoula, "Absolute sensitivity calibration of extreme ultraviolet photoresists," Opt. Express 16, 11519-11524 (2008)

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