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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 17 — Aug. 18, 2008
  • pp: 12478–12486

Integration of hybrid silicon lasers and electroabsorption modulators

Matthew N. Sysak, Joel O. Anthes, John E. Bowers, Omri Raday, and Richard Jones  »View Author Affiliations

Optics Express, Vol. 16, Issue 17, pp. 12478-12486 (2008)

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We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III–V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 °C is achieved with output power >1.0 mW and threshold current of <50 mA. The modulator bandwidth is >2GHz with 5 dB DC extinction.

© 2008 Optical Society of America

OCIS Codes
(060.2330) Fiber optics and optical communications : Fiber optics communications
(060.2340) Fiber optics and optical communications : Fiber optics components

ToC Category:
Fiber Optics and Optical Communications

Original Manuscript: May 30, 2008
Revised Manuscript: July 24, 2008
Manuscript Accepted: July 25, 2008
Published: August 4, 2008

Matthew N. Sysak, Joel O. Anthes, John E. Bowers, Omri Raday, and Richard Jones, "Integration of hybrid silicon lasers and electroabsorption modulators," Opt. Express 16, 12478-12486 (2008)

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