Integration of hybrid silicon lasers and electroabsorption modulators
Optics Express, Vol. 16, Issue 17, pp. 12478-12486 (2008)
http://dx.doi.org/10.1364/OE.16.012478
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Abstract
We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III–V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 °C is achieved with output power >1.0 mW and threshold current of <50 mA. The modulator bandwidth is >2GHz with 5 dB DC extinction.
© 2008 Optical Society of America
OCIS Codes
(060.2330) Fiber optics and optical communications : Fiber optics communications
(060.2340) Fiber optics and optical communications : Fiber optics components
ToC Category:
Fiber Optics and Optical Communications
History
Original Manuscript: May 30, 2008
Revised Manuscript: July 24, 2008
Manuscript Accepted: July 25, 2008
Published: August 4, 2008
Citation
Matthew N. Sysak, Joel O. Anthes, John E. Bowers, Omri Raday, and Richard Jones, "Integration of hybrid silicon lasers and electroabsorption modulators," Opt. Express 16, 12478-12486 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-17-12478
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