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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 17 — Aug. 18, 2008
  • pp: 12701–12706

Sub-Poissonian shot noise of a high internal gain injection photon detector

Omer Gokalp Memis, Alex Katsnelson, Soon-Cheol Kong, Hooman Mohseni, Minjun Yan, Shuang Zhang, Tim Hossain, Niu Jin, and Ilesanmi Adesida  »View Author Affiliations

Optics Express, Vol. 16, Issue 17, pp. 12701-12706 (2008)

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The noise performance of an infrared injection photon detector with very high internal gain was investigated at a wavelength of 1.55 µm. The devices showed sub-Poissonian shot noise with Fano factors around 0.55 at 0.7 V at room temperature. Optical to electrical conversion factors of 3000 electrons per absorbed photon were recorded at 0.7 V. The change in noise-equivalent power with respect to bias voltage was evaluated. The optical to electrical conversion factor and Fano factor were measured under increasing illumination and compared to theoretical expectations.

© 2008 Optical Society of America

OCIS Codes
(040.3060) Detectors : Infrared
(040.3780) Detectors : Low light level
(040.5160) Detectors : Photodetectors

ToC Category:

Original Manuscript: February 29, 2008
Revised Manuscript: July 3, 2008
Manuscript Accepted: July 9, 2008
Published: August 7, 2008

Omer Gokalp Memis, Alex Katsnelson, Soon-Cheol Kong, Hooman Mohseni, Minjun Yan, Shuang Zhang, Tim Hossain, Niu Jin, and Ilesanmi Adesida, "Sub-Poissonian shot noise of a high internal gain injection photon detector," Opt. Express 16, 12701-12706 (2008)

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