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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 17 — Aug. 18, 2008
  • pp: 13122–13132

Gain and noise characteristics of high-bit-rate silicon parametric amplifiers

Xinzhu Sang and Ozdal Boyraz  »View Author Affiliations


Optics Express, Vol. 16, Issue 17, pp. 13122-13132 (2008)
http://dx.doi.org/10.1364/OE.16.013122


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Abstract

We report a numerical investigation on parametric amplification of high-bit-rate signals and related noise figure inside silicon waveguides in the presence of two-photon absorption (TPA), TPA-induced free-carrier absorption, free-carrier-induced dispersion and linear loss. Different pump parameters are considered to achieve net gain and low noise figure. We show that the net gain can only be achieved in the anomalous dispersion regime at the high-repetition-rate, if short pulses are used. An evaluation of noise properties of parametric amplification in silicon waveguides is presented. By choosing pulsed pump in suitably designed silicon waveguides, parametric amplification can be a chip-scale solution in the high-speed optical communication and optical signal processing systems.

© 2008 Optical Society of America

OCIS Codes
(190.4380) Nonlinear optics : Nonlinear optics, four-wave mixing
(230.4320) Optical devices : Nonlinear optical devices
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.4480) Optoelectronics : Optical amplifiers

ToC Category:
Optoelectronics

History
Original Manuscript: May 12, 2008
Revised Manuscript: June 24, 2008
Manuscript Accepted: June 30, 2008
Published: August 12, 2008

Citation
Xinzhu Sang and Ozdal Boyraz, "Gain and noise characteristics of high-bit-rate silicon parametric amplifiers," Opt. Express 16, 13122-13132 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-17-13122


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