Sub-diffraction-limited interference photolithography with metamaterials
Optics Express, Vol. 16, Issue 18, pp. 13579-13584 (2008)
http://dx.doi.org/10.1364/OE.16.013579
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Abstract
We present that an interference lithography technique beyond the diffraction limit can be theoretically achieved by positing an anisotropic metamaterial under the conventional lithographic mask. Based on the special dispersion characteristics of the metamaterial, only the enhanced evanescent waves with high spatial frequencies can transmit through the metamaterial and contribute to the lithography process. Rigorous coupled wave analysis shows that with 442nm exposure light, one-dimensional periodical structures with 40nm features can be patterned. This technique provides an alternative method to fabricate large-area nanostructures.
© 2008 Optical Society of America
OCIS Codes
(220.3740) Optical design and fabrication : Lithography
(240.6690) Optics at surfaces : Surface waves
(260.3160) Physical optics : Interference
(160.3918) Materials : Metamaterials
ToC Category:
Metamaterials
History
Original Manuscript: July 17, 2008
Revised Manuscript: August 4, 2008
Manuscript Accepted: August 5, 2008
Published: August 19, 2008
Citation
Ting Xu, Yanhui Zhao, Junxian Ma, Changtao Wang, Jianhua Cui, Chunlei Du, and Xiangang Luo, "Sub-diffraction-limited interference photolithography with metamaterials," Opt. Express 16, 13579-13584 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-18-13579
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