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Optics Express

Optics Express

  • Editor: Martijn de Sterke
  • Vol. 16, Iss. 20 — Sep. 29, 2008
  • pp: 15415–15424

Double phase conjugate mirror using Sn2P2S6 for injection locking of a laser diode bar

Tobias Bach, Mark Fretz, Mojca Jazbinšek, and Peter Günter  »View Author Affiliations


Optics Express, Vol. 16, Issue 20, pp. 15415-15424 (2008)
http://dx.doi.org/10.1364/OE.16.015415


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Abstract

We demonstrate double phase-conjugation in pure and Tedoped Sn2P2S6, a semiconducting ferroelectric material, at the wavelength of 685 nm. We observe a phase conjugate reflectivity of more than 800% at an intensity ratio of the pump beams of 44 for Te-doped Sn 2P2S6. Using a laser diode bar emitting at 685 nm, we demonstrate double phase conjugation of three independent emitters of the laser diode bar with a single mode master laser. By adjusting the center wavelength of the master laser to the center wavelength of an emitter with an accuracy of less than 0.1 nm, locking of any emitter of the laser diode bar is demonstrated. We improve the spectral width of the emitter from 0.5nm to below 2.5·10-4 nm.

© 2008 Optical Society of America

OCIS Codes
(140.3520) Lasers and laser optics : Lasers, injection-locked
(160.5320) Materials : Photorefractive materials
(190.5040) Nonlinear optics : Phase conjugation

ToC Category:
Materials

History
Original Manuscript: August 8, 2008
Revised Manuscript: September 3, 2008
Manuscript Accepted: September 3, 2008
Published: September 15, 2008

Citation
Tobias Bach, Mark Fretz, Mojca Jazbinšek, and Peter Günter, "Double phase conjugate mirror using Sn2P2S6 for injection locking of a laser diode bar," Opt. Express 16, 15415-15424 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-20-15415


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