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Optics Express

Optics Express

  • Editor: Martijn de Sterke
  • Vol. 16, Iss. 20 — Sep. 29, 2008
  • pp: 15932–15941

Efficient visible laser emission of GaN laser diode pumped Pr-doped fluoride scheelite crystals

F. Cornacchia, A. Di Lieto, M. Tonelli, A. Richter, E. Heumann, and G. Huber  »View Author Affiliations

Optics Express, Vol. 16, Issue 20, pp. 15932-15941 (2008)

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In the present work we report on the growth, spectroscopy and laser results of diode pumped Pr-doped LiYF4, LiLuF4 and LiGdF4 fluoride, scheelite-type structure crystals. We measured the polarisation dependent absorption and emission properties as well as the decay time of the 3P0 level. Exploiting the 3P2 absorption around 444 nm, we obtained efficient laser emission under GaN laser diode pumping on several transitions from the green to the near infrared wavelength range.

© 2008 Optical Society of America

OCIS Codes
(140.3580) Lasers and laser optics : Lasers, solid-state
(160.5690) Materials : Rare-earth-doped materials
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence

ToC Category:
Lasers and Laser Optics

Original Manuscript: August 1, 2008
Revised Manuscript: September 11, 2008
Manuscript Accepted: September 14, 2008
Published: September 22, 2008

F. Cornacchia, A. Di Lieto, M. Tonelli, A. Richter, E. Heumann, and G. Huber, "Efficient visible laser emission of GaN laser diode pumped Pr-doped fluoride scheelite crystals," Opt. Express 16, 15932-15941 (2008)

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