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Optics Express

Optics Express

  • Editor: Martijn de Sterke
  • Vol. 16, Iss. 20 — Sep. 29, 2008
  • pp: 15964–15969

Passively mode-locked GaInNAs disk laser operating at 1220 nm

Jussi Rautiainen, Ville-Markus Korpijärvi, Janne Puustinen, Mircea Guina, and Oleg G. Okhotnikov  »View Author Affiliations

Optics Express, Vol. 16, Issue 20, pp. 15964-15969 (2008)

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We report an optically-pumped semiconductor disk laser passively mode-locked with a semiconductor saturable-absorber mirror. Both the absorber and the gain media were made of dilute nitride compound semiconductor, GaInNAs, which enables operation around 1.2 µm wavelengths. The laser generated 5 ps optical pulses with an average output power up to 275 mW. Our demonstration provides an attractive approach for efficiently generating red-wavelengths through external cavity frequency doubling.

© 2008 Optical Society of America

OCIS Codes
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: June 24, 2008
Revised Manuscript: September 12, 2008
Manuscript Accepted: September 15, 2008
Published: September 24, 2008

Jussi Rautiainen, Ville-Markus Korpijärvi, Janne Puustinen, Mircea Guina, and Oleg Okhotnikov, "Passively mode-locked GaInNAs disk laser operating at 1220 nm," Opt. Express 16, 15964-15969 (2008)

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