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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 21 — Oct. 13, 2008
  • pp: 16806–16824

High-speed low-power photonic transistor devices based on optically-controlled gain or absorption to affect optical interference

Yingyan Huang and Seng-Tiong Ho  »View Author Affiliations

Optics Express, Vol. 16, Issue 21, pp. 16806-16824 (2008)

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We show that a photonic transistor device can be realized via the manipulation of optical interference by optically controlled gain or absorption in novel ways, resulting in efficient transistor signal gain and switching action. Exemplary devices illustrate two complementary device types with high operating speed, µm size, µW switching power, and switching gain. They can act in tandem to provide a wide variety of operations including wavelength conversion, pulse regeneration, and logical operations. These devices could have a Transistor Figure-of-Merits >105 times higher than current χ(3) approaches and are highly attractive.

© 2008 Optical Society of America

OCIS Codes
(230.1150) Optical devices : All-optical devices
(230.4320) Optical devices : Nonlinear optical devices

ToC Category:
Optical Devices

Original Manuscript: July 9, 2008
Revised Manuscript: September 28, 2008
Manuscript Accepted: October 3, 2008
Published: October 7, 2008

Yingyan Huang and Seng-Tiong Ho, "High-speed low-power photonic transistor devices based on optically-controlled gain or absorption to affect optical interference," Opt. Express 16, 16806-16824 (2008)

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