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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 21 — Oct. 13, 2008
  • pp: 16860–16866

Transverse-junction superluminescent diodes at the 1.1µm wavelength regime

Shi-Hao Guol, Jr-Hung Wang, Yu-Huei Wu, Wei Lin, Ying-Jay Yang, Chi-Kuang Sun, and Jin-Wei Shi  »View Author Affiliations

Optics Express, Vol. 16, Issue 21, pp. 16860-16866 (2008)

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We demonstrate, for the first time to our knowledge, GaAs-based transverse-junction (TJ) superluminescent diodes (SLDs) that operate at a wavelength of 1.1 µm. Due to lateral current injection by use of TJ, specified as transverse carrier flow spread in each quantum well horizontally instead of vertical well-by-well injection, nonuniform carrier distribution can be minimized among different multiple quantum wells (MQWs), which is a problem in vertical-junction (VJ) SLDs whose electroluminescent (EL) spectrum is governed by the center wavelength of QWs near the p side. In contrast with a VJ SLD, the EL spectrum of our device is determined by QWs that have a larger differential gain than the positions of QWs neighbored with a p side layer.

© 2008 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5980) Optoelectronics : Semiconductor optical amplifiers

ToC Category:

Original Manuscript: May 30, 2008
Revised Manuscript: July 7, 2008
Manuscript Accepted: August 25, 2008
Published: October 8, 2008

Shi-Hao Guol, Jr-Hung Wang, Yu-Huei Wu, Wei Lin, Ying-Jay Yang, Chi-Kuang Sun, and Jin-Wei Shi, "Transverse-junction superluminescent diodes at the 1.1μm wavelength regime," Opt. Express 16, 16860-16866 (2008)

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