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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 22 — Oct. 27, 2008
  • pp: 17554–17559

Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers

Muhan Choi, Susumu Shinohara, and Takahisa Harayama  »View Author Affiliations

Optics Express, Vol. 16, Issue 22, pp. 17554-17559 (2008)

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We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.

© 2008 Optical Society of America

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.3410) Lasers and laser optics : Laser resonators
(140.3945) Lasers and laser optics : Microcavities
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: August 13, 2008
Revised Manuscript: October 14, 2008
Manuscript Accepted: October 14, 2008
Published: October 16, 2008

Muhan Choi, Susumu Shinohara, and Takahisa Harayama, "Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers," Opt. Express 16, 17554-17559 (2008)

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Fig. 1. Fig. 2. Fig. 3.

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