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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 22 — Oct. 27, 2008
  • pp: 18340–18344

12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode

Jong-Bum You, Miran Park, Jeong-Woo Park, and Gyungock Kim  »View Author Affiliations

Optics Express, Vol. 16, Issue 22, pp. 18340-18344 (2008)

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We present a high speed optical modulation using carrier depletion effect in an asymmetric silicon p-n diode resonator. To optimize coupling efficiency and reduce bending loss, two-step-etched waveguide is used in the racetrack resonator with a directional coupler. The quality factor of the resonator with a circumference of 260 um is 9,482, and the DC on/off ratio is 8 dB at -12V. The device shows the 3dB bandwidth of ~8 GHz and the data transmission up to 12.5Gbit/s.

© 2008 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.2090) Optical devices : Electro-optical devices
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Integrated Optics

Original Manuscript: September 4, 2008
Revised Manuscript: October 20, 2008
Manuscript Accepted: October 20, 2008
Published: October 23, 2008

Jong-Bum You, Miran Park, Jeong-Woo Park, and Gyungock Kim, "12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode," Opt. Express 16, 18340-18344 (2008)

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