Thermo-optic effect and optical third order nonlinearity in nc-Si embedded in a silicon-nitride film
Optics Express, Vol. 16, Issue 22, pp. 18390-18396 (2008)
http://dx.doi.org/10.1364/OE.16.018390
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Abstract
Using a self-diffraction experiment with 7ns pulses at 532nm we studied a silicon nitride film containing silicon nanoclusters (nc-Si) of 3.1±0.37 nm mean size. The sample was prepared by remote plasma-enhanced chemical vapor deposition (RPECVD), and we found that its nonlinearity consists of a combination of electronic and thermal contributions. By varying the repetition rate of the laser, we discriminated the responsible mechanisms for the nonlinear response. Using this procedure we determined a total |χ(3)1111|=3.3×10-10esu, n2 =2.7×10-16 m2/W, β=1×10-9 m/W and dn/dT=1×10-4oC-1 for our sample. We also show results for the optical Kerr effect using 80 fs pulses at 820 nm. The purely electronic nonlinearity measured is characterized by |χ(3)1111|=9.5×10-11 esu.
© 2008 Optical Society of America
OCIS Codes
(160.6840) Materials : Thermo-optical materials
(190.0190) Nonlinear optics : Nonlinear optics
(190.3270) Nonlinear optics : Kerr effect
ToC Category:
Nonlinear Optics
History
Original Manuscript: June 20, 2008
Revised Manuscript: July 14, 2008
Manuscript Accepted: July 17, 2008
Published: October 24, 2008
Citation
C. Torres-Torres, A. López-Suárez, L. Tamayo-Rivera, R. Rangel-Rojo, A. Crespo-Sosa, J. C. Alonso, and A. Oliver, "Thermo-optic effect and optical third order nonlinearity in nc-Si embedded in a silicon-nitride film," Opt. Express 16, 18390-18396 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-22-18390
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