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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 24 — Nov. 24, 2008
  • pp: 19779–19784

Free carrier lifetime modification for silicon waveguide based devices

N.M. Wright, D.J. Thomson, K.L. Litvinenko, W.R. Headley, A.J. Smith, A.P. Knights, J.H.B. Deane, F.Y. Gardes, G.Z. Mashanovich, R. Gwilliam, and G.T. Reed  »View Author Affiliations

Optics Express, Vol. 16, Issue 24, pp. 19779-19784 (2008)

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We investigate the effect of silicon ion irradiation on free carrier lifetime in silicon waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted ions can be reduced to an acceptable level if irradiation energy and dose are correctly chosen. Simulations of Raman scattering suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to remove the photo-generated free carriers.

© 2008 Optical Society of America

OCIS Codes
(230.7370) Optical devices : Waveguides
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.4480) Optoelectronics : Optical amplifiers

ToC Category:

Original Manuscript: August 19, 2008
Revised Manuscript: November 7, 2008
Manuscript Accepted: November 10, 2008
Published: November 14, 2008

N. M. Wright, D. J. Thomson, K. L. Litvinenko, W. R. Headley, A. J. Smith, A. P. Knights, J. H. B. Deane, F. Y. Gardes, G. Z. Mashanovich, R. Gwilliam, and G. T. Reed, "Free carrier lifetime modification for silicon waveguide based devices," Opt. Express 16, 19779-19784 (2008)

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