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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 24 — Nov. 24, 2008
  • pp: 19891–19899

>1 MW peak power single-mode high-brightness passively Q-switched Nd3+:YAG microchip laser

Hiroshi Sakai, Hirohumi Kan, and Takunori Taira  »View Author Affiliations

Optics Express, Vol. 16, Issue 24, pp. 19891-19899 (2008)

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A high-brightness diode end-pumped Nd:YAG microchip laser, passively Q-switched by a Cr4+:YAG saturable absorber (SA), has been developed. The dependences of pulse energy and width were investigated based on theoretical verification to enhance the peak power. As a result, the peak power exceeded 1.2 MW with M2 =1.04 and spectrum width Δλ<5.1 pm at a repetition rate of 100 Hz. Brightness of 98 TW/sr·cm2 was obtained with a supplied average electrical power of 2.3 W. The peak power increased up to 2.1 MW with M2 =1.36. Peak power of 1.7 MW was obtained from a 2-cm-diameter×5-cm-long monolithic laser head.

© 2008 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3530) Lasers and laser optics : Lasers, neodymium
(140.3540) Lasers and laser optics : Lasers, Q-switched
(140.3570) Lasers and laser optics : Lasers, single-mode

ToC Category:
Lasers and Laser Optics

Original Manuscript: August 29, 2008
Revised Manuscript: November 9, 2008
Manuscript Accepted: November 11, 2008
Published: November 18, 2008

Hiroshi Sakai, Hirohumi Kan, and Takunori Taira, ">1 MW peak power single-mode high-brightness passively Q-switched Nd3+:YAG microchip laser," Opt. Express 16, 19891-19899 (2008)

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