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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 24 — Nov. 24, 2008
  • pp: 20081–20098

Femtosecond laser photo-response of Ge23Sb7S70 films

Troy Anderson, Laeticia Petit, Nathan Carlie, Jiyeon Choi, Juejun Hu, Anu Agarwal, Lionel Kimerling, Kathleen Richardson, and Martin Richardson  »View Author Affiliations

Optics Express, Vol. 16, Issue 24, pp. 20081-20098 (2008)

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Ternary chalcogenide glass films from identical parent bulk glasses were prepared by thermal evaporation (TE) and pulsed laser deposition (PLD) and subjected to 810-nm femtosecond laser exposure at both kHz and MHz repetition rates. The exposure-induced modification on the glass film’s surface profile, refractive index, and structural properties were shown to be a function of laser irradiance, the number of laser pulses per focal spot, and repetition rate. Film response was shown to be related to deposition technique-related density and the number of glass bonds within the irradiated focal volume. The induced changes resulted from a reduction in glass network connectivity among GeS4/2, GeS4, S-S and S3Ge-S-GeS3 units.

© 2008 Optical Society of America

OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(160.4760) Materials : Optical properties
(240.0310) Optics at surfaces : Thin films
(300.6450) Spectroscopy : Spectroscopy, Raman
(320.2250) Ultrafast optics : Femtosecond phenomena

ToC Category:
Ultrafast Optics

Original Manuscript: September 8, 2008
Revised Manuscript: November 3, 2008
Manuscript Accepted: November 7, 2008
Published: November 21, 2008

Troy Anderson, Laeticia Petit, Nathan Carlie, Jiyeon Choi, Juejun Hu, Anu Agarwal, Lionel Kimerling, Kathleen Richardson, and Martin Richardson, "Femtosecond laser photo-response of Ge23Sb7S70 films," Opt. Express 16, 20081-20098 (2008)

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