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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 25 — Dec. 8, 2008
  • pp: 20388–20394

Selectively-undercut traveling-wave electroabsorption modulators incorporating a p-InGaAs contact layer

Matthew M. Dummer, James R. Raring, Jonathan Klamkin, Anna Tauke-Pedretti, and Larry A. Coldren  »View Author Affiliations

Optics Express, Vol. 16, Issue 25, pp. 20388-20394 (2008)

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A novel fabrication process has been developed for fabricating undercut-etched electroabsorption modulators that are compatible with tunable lasers. This process allows for the incorporation of highly doped p-type InGaAs above the upper cladding as an ohmic contact layer. The EAM demonstrates significant improvement in the microwave performance with little effect on modulation efficiency due to the undercut etching. This device uses a traveling wave electrode design with an integrated, matched termination resistor to demonstrate a 34 GHz 3-dB bandwidth for a 600 µm long modulator.

© 2008 Optical Society of America

OCIS Codes
(230.4110) Optical devices : Modulators
(230.7020) Optical devices : Traveling-wave devices
(230.4205) Optical devices : Multiple quantum well (MQW) modulators

ToC Category:
Optical Devices

Original Manuscript: July 10, 2008
Revised Manuscript: September 24, 2008
Manuscript Accepted: September 24, 2008
Published: November 25, 2008

Matthew M. Dummer, James R. Raring, Jonathan Klamkin, Anna Tauke-Pedretti, and Larry A. Coldren, "Selectively-undercut traveling-wave electroabsorption modulators incorporating a p-InGaAs contact layer," Opt. Express 16, 20388-20394 (2008)

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