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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 25 — Dec. 8, 2008
  • pp: 20571–20576

High speed hybrid silicon evanescent Mach-Zehnder modulator and switch

Hui-Wen Chen, Ying-hao Kuo, and John E. Bowers  »View Author Affiliations

Optics Express, Vol. 16, Issue 25, pp. 20571-20576 (2008)

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We demonstrate the first high speed silicon evanescent Mach Zehnder modulator and switch. The modulator utilizes carrier depletion within AlGaInAs quantum wells to obtain Vπ L of 2 V-mm and clear open eye at 10 Gb/s. The switch exhibits a power penalty of 0.5 dB for all ports at 10 Gb/s modulation.

© 2008 Optical Society of America

OCIS Codes
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators
(250.4110) Optoelectronics : Modulators

ToC Category:

Original Manuscript: September 23, 2008
Revised Manuscript: October 31, 2008
Manuscript Accepted: November 4, 2008
Published: November 26, 2008

Hui-Wen Chen, Ying-hao Kuo, and John E. Bowers, "High speed hybrid silicon evanescent Mach-Zehnder modulator and switch," Opt. Express 16, 20571-20576 (2008)

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  1. A. S. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, "A high-speed silicon optical modulator based on a metal-oxide semiconductor capacitor," Nature 427, 615--618 (2004). [CrossRef] [PubMed]
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  3. Q. Xu, S. Pradhan, B. Schmidt, J. Shakya, and M. Lipson, "12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators," Nature 435, 325-327 (2005). [CrossRef] [PubMed]
  4. Y.-H. Kuo, H.-W. Chen, and J. E. Bowers, "High speed hybrid silicon evanescent electroabsorption modulator," Opt. Express 16, 9936-9942 (2008). [CrossRef] [PubMed]
  5. H.-W. Chen, Y.-H. Kuo, and J. E. Bowers, "A Hybrid Silicon-AlGaInAs Phase Modulator," IEEE Photon. Technol. Lett. 23 (to be published)
  6. A. W. Fang, E. Lively, Y-H. Kuo, D. Liang, and J. E. Bowers, "A distributed feedback silicon evanescent laser," Opt. Express 16, 4413-4419 (2008). [CrossRef] [PubMed]
  7. H. Park, Y.-h Kuo, A. W. Fang, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, "A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector," Opt. Express 15, 13539-13546 (2007). [CrossRef] [PubMed]
  8. H. Ohe, H. Shimizu, and Y. Nakano, "InGaAlAs Multiple-Quantum-Well Optical Phase Modulators Based on Carrier Depletion," IEEE Photon. Technol. Lett.,  19, 1616-1618 (2007). [CrossRef]
  9. D. Liang, E. A. Lucero, and J. E. Bowers, "Highly Efficient Vertical Outgassing Channels for Robust, Void-Free, Low-Temperature Direct Wafer Bonding," The 35th Conference on the Physics and Chemistry of Semiconductor Interfaces, Santa Fe, NM, Jan. 2008.
  10. J. Vinchant, J. A. Cavailles, M. Erman, P. Jarry, and M. Renaud, "InP/GaInAsP Guided-Wave Phase Modulators Based on Carrier-induced Effects: Theory and Experiment," IEEE J. Lightwave Technol. 10, 63-70 (1992). [CrossRef]

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