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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 25 — Dec. 8, 2008
  • pp: 20759–20773

Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electron-hole recombination lifetime

N. C. Chen, C. M. Lin, C. Shen, W. C. Lien, and T. Y. Lin  »View Author Affiliations

Optics Express, Vol. 16, Issue 25, pp. 20759-20773 (2008)

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The edge emission from AlGaInP light-emitting diodes showed a red-shifted peak in addition to the peak of surface emission. This shift resulted from the quantum-well absorption of the guided wave. Although the shift degrades the color quality and the extraction efficiency of the device, it helps elucidate many important optical properties of the material and the dynamics of carrier recombination, including the electron-hole recombination lifetime, the optical joint density of state, the spontaneous emission spectrum and the absorption spectrum. A simple concept of the bimolecular recombination is established. The corresponding coefficient can be expressed by a simple formula and was therefore determined.

© 2008 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.7400) Optical devices : Waveguides, slab
(300.1030) Spectroscopy : Absorption
(300.2140) Spectroscopy : Emission
(300.6170) Spectroscopy : Spectra
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

Original Manuscript: October 13, 2008
Revised Manuscript: November 25, 2008
Manuscript Accepted: November 25, 2008
Published: December 1, 2008

N. C. Chen, C. M. Lin, C. Shen, W. C. Lien, and T. Y. Lin, "Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electron-hole recombination lifetime," Opt. Express 16, 20759-20773 (2008)

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  1. C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V.M. Robbins, "High performance AlGaInP visible light-emitting diodes," Appl. Phys. Lett. 57, 2937-2939 (1990). [CrossRef]
  2. A. T. Meney, A. D. Prins, A. F. Phillips, J. L. Sly, E. P. O’Reilly, D. J. Dunstan, A. R. Adams, and A. Valster, "Determination of the band structure of disordered AlGaInP and its influence on visible-laser characteristics," IEEE J. Sel. Top. Quantum Electron. 1, 697-706 (1995). [CrossRef]
  3. D. J. Mowbray, O. P. Kowalski, M. Hopkinson, M. S. Skolnick, and J. P. R. David, "Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy," Appl. Phys. Lett. 65, 213-215 (1994). [CrossRef]
  4. D. Patel, J. M. Pikal, C. S. Menoni, K. J. Thomas, F. A. Kish, and M. R. Hueschen, "Effect of indirect minima carrier population on the output characteristics of AlGaInP light-emitting diodes," Appl. Phys. Lett. 75, 3201-3203 (1999). [CrossRef]
  5. H. Sugawara, M. Ishikawa and G. Hatakoshi, "High-efficiency InGaAlP/GaAs visible light-emitting diodes," Appl. Phys. Lett. 58, 1010-1012 (1991). [CrossRef]
  6. R. M. Fletcher, C. P. Kao, T. D. Osentowski, K. H. Huang, M. G. Graford, and V. M. Robbins, "The growth and properties of high performance AlGaInP emitters using a lattice mismatched GaP window layer," J. Electron. Mater. 20, 1125-1130 (1991). [CrossRef]
  7. H. Sugawara, K. Itaya, H. Nozaki, and G. Hatakoshi, "High-brightness InGaAlP green light-emitting diodes," Appl. Phys. Lett. 61, 1775-1777 (1992). [CrossRef]
  8. K. H. Huang, J. G. Yu, C. P. Kuo, R. M. Fletcher, T. D. Osentowski, L. J. Stinson, M. G. Craford, and A. S. H. Liao, "Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer," Appl. Phys. Lett. 61, 1045-1047 (1992). [CrossRef]
  9. F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, M. G. Craford, and V. M. Robbins, "Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes," Appl. Phys. Lett. 64, 2839-2841 (1994). [CrossRef]
  10. N. F. Gardner, H. C. Chui, E. I. Chen, M. R. Krames, J-W. Huang, F. A. Kish, S. A. Stockman, C. P. Kocot, T. S. Tan, and N. Moll, "1.4× efficiency improvement in transparent-substrate (AlxGa1-x)0.5In0.5P light-emitting diodes with thin (≤2000 A) active regions," Appl. Phys. Lett. 74, 2230-2232 (1999). [CrossRef]
  11. P. H. Chang, N. C. Chen, Y. N. Wang, C. F. Shih, M. H. Wu, T. H. Yang, Y. H. Tzou, and S. J. Wang, "Light-emitting diodes with nickel substrates fabricated by electroplating," J. Vac. Sci. Technol. B 23, L22-L24 (2005). [CrossRef]
  12. M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Crafold, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, "High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P/GaAs light-emitting diodes exhibiting >50% external quantum efficiency," Appl. Phys. Lett. 75, 2365-2367 (1999). [CrossRef]
  13. Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Mukai, "Ultra-high efficiency white light emitting diodes," Jpn. J. Appl. Phys. 45, L1084-L1086 (2006). [CrossRef]
  14. N. C. Chen, Y. K. Yang, W. C. Lien, and C. Y. Tseng, "Forward current-voltage characteristics of an AlGaInP light-emitting diodes," J. Appl. Phys. 102, 043706 (2007). [CrossRef]
  15. N. C. Chen, Y. N. Wang, C. Y. Tseng, and Y. K. Yang, "Determination of junction temperature in AlGaInP/GaAs light emitting diodes by self-excited photoluminescence signal," Appl. Phys. Lett. 89, 101114 (2006). [CrossRef]
  16. G. M. Lewis, P. M. Smowton, P. Blood, G. Jones, and S. Bland, "Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes," Appl. Phys. Lett. 80, 3488-3490 (2002). [CrossRef]
  17. S. L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995), Chap. 9.
  18. H. Kroemer, Quantum Mechanics: for Engineering, Materials Science, and Applied Physics (Prentice Hall, Englewood Cliffs, 1994), Chap. 17.
  19. S. Gasiorowicz, Quantum Physics, 3rd edition (Wiley, Hoboken, 2003), Chap. 17.
  20. Y. Kaneko and K. Kishino, "Refractive indices measurement of (GaInP)m/(AlInP)n quasi-quaternaries and GaInP/AlInP multiple quantum wells," J. Appl. Phys. 76, 1809-1818 (1994). [CrossRef]
  21. B. E. A. Saleh and M. C. Teich, Fundamentals of Photonics, (Wiley, New York, 1991), Chap. 15. [CrossRef]
  22. L. P. Lee and S. J. Chua, "Analysis and design of AlGaInP single-quantum-well LED," Proc. SPIE 3896, 155-162 (1999). [CrossRef]
  23. P. Zhou, H. X. Jiang, R. Bannwart, S. A. Solin, and G. Bai, "Excitonic transitions in GaAs-AlxGa1-xAs multiple quantum wells affected by interface roughness," Phys. Rev. B 40,11862-11867 (1989). [CrossRef]
  24. C. Weisbuch, R. Dingle, A. C. Gossard, and W. Wiegmann, "Optical characterization of interface disorder in GaAs-Ga1-xAlxAs multi-quantum well structures," Solid State Commun. 38, 709-712 (1981). [CrossRef]
  25. J. J. Coleman, P. D. Dapkus, M. D. Camras, N. Holonyak, Jr., W. D. Laidig, T. S. Low, M, S. Burroughs, and K. Hess, "Absorption, stimulated emission, and clustering in AlAs-AlxGa1-xAs-GaAs superlattices," J. Appl. Phys. 52, 7291-7295 (1981). [CrossRef]
  26. P. Blood, E. D. Fletcher, P. J. Hulyer, and P. M. Smowton, "Emission wavelength of AlGaAs-GaAs multiple quantum well lasers," Appl. Phys. Lett. 48, 1111-1113 (1986). [CrossRef]
  27. H. D. Summers, J. D. Thomson, P. M. Smowton, P. Blood, and M. Hopkinson, "Thermodynamic balance in quantum dot lasers," Semicond. Sci. Technol. 16, 140-143 (2001). [CrossRef]
  28. C. H. Henry, R. A. Logan, and F. R. Merritt, "Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers," J. Appl. Phys. 51, 3042-3050 (1980). [CrossRef]
  29. C. H. Henry, R. A. Logan, H. Temkin, and F. R. Merritt, "Absorption, emission and gain spectra of 1.3 µm InGaAsP quaternary lasers," IEEE J. Quantum Electron. QE-19, 941-946 (1983). [CrossRef]
  30. P. Blood, A. I. Kucharska, J. P. Jacobs, and K. Griffiths, "Measurement and calculation of spontaneous recombination current and optical gain in GaAs-AlGaAs quantum-well structures," J. Appl. Phys. 70, 1144-1156 (1991). [CrossRef]
  31. G. M. Lewis, P. M. Smowton, J. D. Thomson, H. D. Summers, P. Blood, "Measurement of true spontaneous emission spectra from the facet of diode laser structures," Appl. Phys. Lett. 80, 1-3 (2002). [CrossRef]
  32. J. Rennie, M. Okajima, M. Watanabe, and G. Hatakoshi, "High temperature (74°C) cw operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier," IEEE J. Quantum Electron. 29, 1857-1862 (1993). [CrossRef]
  33. M. Honda, M. Ikeda, Y. Mori, K. Kaneko, and N. Watanabe, "The energy of Zn and Se in (AlxGa1-x)0.52In0.48P," Jpn. J. Appl. Phys. 24, L187-L189 (1985). [CrossRef]
  34. E. O. Kane, "Band structure of indium antimonide," J. Phys. Chem. Solids 1, 249 (1957). [CrossRef]
  35. G. Lasher and F. Stern, "Spontaneous and stimulated recombination radiation in semiconductors," Phys. Rev. 113, A553 (1964). [CrossRef]
  36. H. C. Casey, Jr. and F. Stern, "Concentration-dependent absorption and spontaneous emission on heavily doped GaAs," J. Appl. Phys. 47, 631 (1976). [CrossRef]
  37. P. Lawaetz, "Valence-band parameters in cubic semiconductors," Phys. Rev. B 4, 3460 (1971). [CrossRef]
  38. P. Roura, M. L. Miguel, A. Cornet, and J. R. Morante, "Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy," J. Appl. Phys. 81, 6916-6920 (1997). [CrossRef]
  39. D. A. Neamen, Semiconductor Physics and Devices, 3rd edition (McGraw-Hill, Boston, 2003), Chap. 4.
  40. E. F. Schubert, Light-Emitting Diodes (Cambridge, Cambridge, 2003), Chap. 3.
  41. M. Guina, J. Dekker, A. Tukiainen, S. Orsila, M. Saarinen, M. Dumitrescu, P. Sipilä, P. Savolainen, and M. Pessa, "Influence of deep level impurities on modulation response of InGaP light emitting diodes," J. Appl. Phys. 89, 1151-1155 (2001). [CrossRef]
  42. X. Duan, Y. Huang, R. Agarwal, and C. M. Lieber, "Single-nanowire electrically driven lasers," Nature 421, 241-245 (2003). [CrossRef] [PubMed]

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