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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 25 — Dec. 8, 2008
  • pp: 20759–20773

Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electron-hole recombination lifetime

N. C. Chen, C. M. Lin, C. Shen, W. C. Lien, and T. Y. Lin  »View Author Affiliations


Optics Express, Vol. 16, Issue 25, pp. 20759-20773 (2008)
http://dx.doi.org/10.1364/OE.16.020759


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Abstract

The edge emission from AlGaInP light-emitting diodes showed a red-shifted peak in addition to the peak of surface emission. This shift resulted from the quantum-well absorption of the guided wave. Although the shift degrades the color quality and the extraction efficiency of the device, it helps elucidate many important optical properties of the material and the dynamics of carrier recombination, including the electron-hole recombination lifetime, the optical joint density of state, the spontaneous emission spectrum and the absorption spectrum. A simple concept of the bimolecular recombination is established. The corresponding coefficient can be expressed by a simple formula and was therefore determined.

© 2008 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.7400) Optical devices : Waveguides, slab
(300.1030) Spectroscopy : Absorption
(300.2140) Spectroscopy : Emission
(300.6170) Spectroscopy : Spectra
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

History
Original Manuscript: October 13, 2008
Revised Manuscript: November 25, 2008
Manuscript Accepted: November 25, 2008
Published: December 1, 2008

Citation
N. C. Chen, C. M. Lin, C. Shen, W. C. Lien, and T. Y. Lin, "Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electron-hole recombination lifetime," Opt. Express 16, 20759-20773 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-25-20759


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