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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 26 — Dec. 22, 2008
  • pp: 21881–21886

2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion

Jussi Rautiainen, Jari Lyytikäinen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg G. Okhotnikov  »View Author Affiliations

Optics Express, Vol. 16, Issue 26, pp. 21881-21886 (2008)

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We report a wafer fused high-power optically-pumped semiconductor disk laser incorporating InP-based active medium fused to a GaAs/AlGaAs distributed Bragg reflector. A record value of over 2.6 W of output power in a spectral range around 1.57 µm was demonstrated, revealing the essential advantage of the wafer fusing technique over monolithically-grown all-InP-based structures. The presented approach allows for integration of lattice-mismatched compounds, quantum-well and quantum-dot based media. This would provide convenient means for extending the wavelength range of semiconductor disk lasers.

© 2008 Optical Society of America

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: October 1, 2008
Revised Manuscript: December 4, 2008
Manuscript Accepted: December 7, 2008
Published: December 17, 2008

Jussi Rautiainen, Jari Lyytikäinen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg G. Okhotnikov, "2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion," Opt. Express 16, 21881-21886 (2008)

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