2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion

doi:10.1364/OE.16.021881

2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion

Jussi Rautiainen, Jari Lyytikäinen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg G. Okhotnikov »View Author Affiliations

Optics Express, Vol. 16, Issue 26, pp. 21881-21886 (2008)
http://dx.doi.org/10.1364/OE.16.021881

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Abstract
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Abstract

We report a wafer fused high-power optically-pumped semiconductor disk laser incorporating InP-based active medium fused to a GaAs/AlGaAs distributed Bragg reflector. A record value of over 2.6 W of output power in a spectral range around 1.57 µm was demonstrated, revealing the essential advantage of the wafer fusing technique over monolithically-grown all-InP-based structures. The presented approach allows for integration of lattice-mismatched compounds, quantum-well and quantum-dot based media. This would provide convenient means for extending the wavelength range of semiconductor disk lasers.

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: October 1, 2008
Revised Manuscript: December 4, 2008
Manuscript Accepted: December 7, 2008
Published: December 17, 2008

Citation
Jussi Rautiainen, Jari Lyytikäinen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg G. Okhotnikov, "2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion," Opt. Express 16, 21881-21886 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-26-21881

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References

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Quantum Electron. 5, 561-573 (1999). [CrossRef]
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L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006). [CrossRef]
J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, "2.7 W tunable orange-red GaInNAs semiconductor disk laser," Opt. Express 15, 18345-18350 (2007). [CrossRef] [PubMed]
J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008). [CrossRef]
H. Lindberg, A. Larsson, and M. Strassner, "Single-frequency operation of a high-power, long-wavelength semiconductor disk laser," Opt. Lett. 30, 17, 2260-2262 (2005). [CrossRef] [PubMed]
Y. Ohiso, C. Amano, Y. Itoh, H. Takenouchi, and T. Kurokawa, "Long-wavelength (1.55-µm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR’s by wafer fusion," IEEE J. Quantum Electron. 34, 1904-1913 (1998). [CrossRef]
A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997). [CrossRef]
G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998). [CrossRef]
A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004). [CrossRef]
A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007). [CrossRef]
R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl Phys. 78, 4227-4237 (1995). [CrossRef]
N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, and J. E. Bowers, "64°C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Sel. Top. Quantum Electron. 3, 359-365 (1997). [CrossRef]
Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000). [CrossRef]

Abraham, P.
Achtenhagen, M.
Albrecht, T.
Alford, W. J.
Allerman, A. A.
Amano, C.
Babic, D. I.
Bedford, R.
Berseth, C.-A.
Black, A.
Bouchoule, S.
Bowers, J. E.
Brick, P.
Caliman, A.
Carey, K.
Chang, Y.
Debray, J. P.
Decobert, J.
Dudley, J. J.
Fallahi, M.
Fan, L.
Guina, M.
Hader, J.
Hakimi, F.
Härkönen, A.
Harmand, J. C.
Harmand, J-C.
Hawkins, A. R.
Holmes, A. L.
Hsu, T.-C.
Hu, E. L.
Iakovlev, V.
Itoh, Y.
Kaneda, Y.
Kapon, E.
Khadour, A.
Koch, S. W.
Korpijärvi, V.-M.
Kurokawa, T.
Kuznetsov, M.
Lafosse, X.
Lagay, N.
Larsson, A.
Leroy, L.
Liau, Z. L.
Lindberg, H.
Luft, J.
Lutgen, S.
Margalit, N. M.
Mariadec, C.
Mereuta, A.
Miard, A.
Mircea, A.
Mirin, R. P.
Moloney, J. V.
Mooradian, A.
Murray, J. T.
Nauka, K.
Ohiso, Y.
Okhotnikov, O. G.
Oudar, J. L.
Oudar, J-C.
Piprek, J.
Raj, R.
Ram, R. J.
Rautiainen, J.
Raymond, T. D.
Reill, W.
Rivera, T.
Rosner, S. J.
Royo, P.
Rudra, A.
Sagnes, I.
Sermage, B.
Späth, W.
Sprague, R.
Stolz, W.
Strassner, M.
Streubel, K.
Suruceanu, G.
Syrbu, A.
Takenouchi, H.
Tourrenc, J-P.
Tuomisto, P.
Ungaro, G.
Wesselmann, J. R.
Yang, L.
Zakharian, A. R.
Zhang, S.

Appl. Phys. Lett.

S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620 (2003). [CrossRef]
L. Fan, T.-C. Hsu, M. Fallahi, J. T. Murray, R. Bedford, Y. Kaneda, J. Hader, A. R. Zakharian, J. V. Moloney, S. W. Koch, and W. Stolz, "Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling," Appl. Phys. Lett. 88, 251117 (2006). [CrossRef]
Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000). [CrossRef]

Electron. Lett.

G. Ungaro, J. C. Harmand, I. Sagnes, B. Sermage, J. P. Debray, C. Mariadec, T. Rivera, J. L. Oudar, and R. Raj, "Room-temperature continuous-wave operation VCSEL at 1.48 µm with Sb-based Bragg reflector," Electron. Lett. 34, 1402-1404 (1998). [CrossRef]

IEEE J. Quantum Electron.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams," IEEE J. Quantum Electron. 5, 561-573 (1999). [CrossRef]
Y. Ohiso, C. Amano, Y. Itoh, H. Takenouchi, and T. Kurokawa, "Long-wavelength (1.55-µm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR’s by wafer fusion," IEEE J. Quantum Electron. 34, 1904-1913 (1998). [CrossRef]

IEEE J. Sel. Top. Quantum Electron.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. HolmesJr., Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, "Wafer fusion: Material issues and device results," IEEE J. Sel. Top. Quantum Electron. 3, 943-951 (1997). [CrossRef]
N. M. Margalit, J. Piprek, S. Zhang, D. I. Babic, K. Streubel, R. P. Mirin, J. R. Wesselmann, and J. E. Bowers, "64°C continuous-wave operation of 1.5-μm vertical-cavity laser," IEEE J. Sel. Top. Quantum Electron. 3, 359-365 (1997). [CrossRef]

IEEE Photon. Technol. Lett.

A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, "1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs," IEEE Photon. Technol. Lett. 16, 1230-1232 (2004). [CrossRef]
A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, "Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C," IEEE Photon. Technol. Lett. 19, 121-123 (2007). [CrossRef]

J. Appl Phys.

R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl Phys. 78, 4227-4237 (1995). [CrossRef]

Opt. Quantum Electron.

J-P. Tourrenc, S. Bouchoule, A. Khadour, J-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, and J-C. Oudar, "Thermal optimization of 1.55μm OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation," Opt. Quantum Electron. 40, 155-165 (2008). [CrossRef]

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