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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 3 — Feb. 4, 2008
  • pp: 1659–1668

Photodetection in silicon beyond the band edge with surface states

T. Baehr-Jones, M. Hochberg, and A. Scherer  »View Author Affiliations


Optics Express, Vol. 16, Issue 3, pp. 1659-1668 (2008)
http://dx.doi.org/10.1364/OE.16.001659


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Abstract

Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are the two main technological hurdles before silicon can become a comprehensive platform for integrated optics. We report on a photocurrent in unimplanted SOI ridge waveguides, which we attribute to surface state absorption. By electrically contacting the waveguides, a photodetector with a responsivity of 36 mA/W and quantum efficiency of 2.8% is demonstrated. The response is shown to have minimal falloff at speeds of up to 60 Mhz.

© 2008 Optical Society of America

OCIS Codes
(040.0040) Detectors : Detectors
(040.6040) Detectors : Silicon
(060.4080) Fiber optics and optical communications : Modulation
(130.0130) Integrated optics : Integrated optics
(130.2790) Integrated optics : Guided waves
(130.3120) Integrated optics : Integrated optics devices
(230.0040) Optical devices : Detectors

ToC Category:
Detectors

History
Original Manuscript: September 19, 2007
Revised Manuscript: January 14, 2008
Manuscript Accepted: January 15, 2008
Published: January 24, 2008

Citation
T. Baehr-Jones, M. Hochberg, and A. Scherer, "Photodetection in silicon beyond the band edge with surface states," Opt. Express 16, 1659-1668 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-3-1659


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