Mechanism initiated by nanoabsorber for UV nanosecond-pulse-driven damage of dielectric coatings
Optics Express, Vol. 16, Issue 5, pp. 3376-3382 (2008)
http://dx.doi.org/10.1364/OE.16.003376
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Abstract
A model of plasma formation induced by UV nanosecond pulse-laser interaction with SiO2 thin film based on nanoabsorber is proposed. The model considers the temperature dependence of band gap. The numerical results show that during the process of nanosecond pulsed-laser interaction with SiO2 thin film, foreign inclusion which absorbs a fraction of incident radiation heats the surrounding host material through heat conduction causing the decrease of the band gap and consequently, the transformation of the initial transparent matrix into an absorptive medium around the inclusion, thus facilitates optical damage. Qualitative comparison with experiments is also provided.
© 2008 Optical Society of America
OCIS Codes
(140.3440) Lasers and laser optics : Laser-induced breakdown
(310.1620) Thin films : Interference coatings
(350.5400) Other areas of optics : Plasmas
ToC Category:
Lasers and Laser Optics
History
Original Manuscript: October 24, 2007
Revised Manuscript: December 18, 2007
Manuscript Accepted: February 5, 2008
Published: February 28, 2008
Citation
Chaoyang Wei, Jianda Shao, Hongbo He, Kui Yi, and Zhengxiu Fan, "Mechanism initiated by nanoabsorber for UV nanosecond-pulse-driven damage of dielectric coatings," Opt. Express 16, 3376-3382 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-5-3376
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