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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 5 — Mar. 3, 2008
  • pp: 3439–3444

Electro-optic and electro-absorption characterization of InAs quantum dot waveguides

Imran B. Akca, Aykutlu Dâna, Atilla Aydinli, Marco Rossetti, Lianhe Li, Andrea Fiore, and Nadir Dagli  »View Author Affiliations

Optics Express, Vol. 16, Issue 5, pp. 3439-3444 (2008)

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Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm.

© 2008 Optical Society of America

OCIS Codes
(230.4110) Optical devices : Modulators
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:

Original Manuscript: December 3, 2007
Revised Manuscript: January 27, 2008
Manuscript Accepted: January 29, 2008
Published: February 29, 2008

Imran B. Akca, Aykutlu Dana, Atilla Aydinli, Marco Rossetti, Lianhe Li, Andrea Fiore, and Nadir Dagli, "Electro-optic and electro-absorption characterization of InAs quantum dot waveguides," Opt. Express 16, 3439-3444 (2008)

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