Electro-optic and electro-absorption characterization of InAs quantum dot waveguides

doi:10.1364/OE.16.003439

Electro-optic and electro-absorption characterization of InAs quantum dot waveguides

Imran B. Akca, Aykutlu Dana, Atilla Aydinli, Marco Rossetti, Lianhe Li, Andrea Fiore, and Nadir Dagli »View Author Affiliations

Optics Express, Vol. 16, Issue 5, pp. 3439-3444 (2008)
http://dx.doi.org/10.1364/OE.16.003439

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Abstract

Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm.

OCIS Codes
(230.4110) Optical devices : Modulators
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Optoelectronics

History
Original Manuscript: December 3, 2007
Revised Manuscript: January 27, 2008
Manuscript Accepted: January 29, 2008
Published: February 29, 2008

Citation
Imran B. Akca, Aykutlu Dana, Atilla Aydinli, Marco Rossetti, Lianhe Li, Andrea Fiore, and Nadir Dagli, "Electro-optic and electro-absorption characterization of InAs quantum dot waveguides," Opt. Express 16, 3439-3444 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-5-3439

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References

R. B. Welstand, S. A. Pappert, C. K. Sun, J. T. Zhu, Y. Z. Liu, and P. K. L. Yu, "Dual-function electroabsorption waveguide modulator/detector for optoelectronic transceiver applications," IEEE Photon. Technol. Lett. 8, 1540-1542 (1996). [CrossRef]
L. Lembo, F. Alvares, D. Lo, C. Tu, P. Wisseman, C. Zmudzinski, and J. Brock, "Optical electroabsorption modulators for wideband, linear, low-insertion loss photonic links," Proc. SPIE Photon. Device Eng. Dual-Use Appl. 2481, 185-196 (1995).
S. S. Lee, R. V. Ramaswamy, and V. S. Sundaram, "Analysis and design of high-speed high-efficiency GaAs-AlGaAs double-heterostructure waveguide phase modulator," IEEE J. Quantum Electron. 27, 726 (1991). [CrossRef]
D. A. B. Miller, D. S. Chemla, T. C. Damer, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett. 53, 2173 (1984). [CrossRef]
S. Schmitt-Rink, D. A. B. Miller, and D. S. Chemla, "Theory of the linear and nonlinear optical properties of semiconductor microcrystallites," Phys. Rev. B 35, 8113 (1987). [CrossRef]
K. Shimomura, S. Arai, and Y. Suematsu, "Operational wavelength range of GaInAs(P)-lnP intersectional optical switch using fieldinduced electrooptic effect in low-dimensional quantum-well structures,’’IEEE J. Quantum Electron. 28, 471-478 (1992). [CrossRef]
L. Davis, K. K. Ko, W.-Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, and P. Bhattacharya, "Photoluminescence and electro-optic properties of small (25-35 nm diameter) quantum boxes," Appl. Phys. Lett. 62, 2766 (1993). [CrossRef]
O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips, "Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots," Appl. Phys. Lett. 72, 1275 (1998). [CrossRef]
S. Ghosh, A. S Lenihan, M. V. G Dutt, O Qasaimeh, D. G Steel, and P. Bhattacharya, "Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots," J. Vac. Sci. Technol. B 19, 1455-1458 (2001). [CrossRef]
J. Tatebayashi, R. B. Laghumavarapu, N. Nuntawong, and D. L. Huffaker, "Measurement of electro-optic coefficients of 1.3 ?m self-assembled InAs/GaAs quantum dots," Electron. Lett. 43, 410-412 (2007). [CrossRef]
G. Moreau, A. Martinez, D.Y. Cong, K. Merghem, A. Miard, A. Lemaître, P. Voisin, A. Ramdane I. Krestnikov, A. R. Kovsh M. Fischer, and J. Koeth, "Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 µm," Appl. Phys. Lett. 91, 91118 (2007). [CrossRef]
A. Markus, J. X. Chen, C. Paranthoen, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett. 82, 1818 (2003). [CrossRef]
S. Nishimura, H. Inoue, H. Sano, and K. Ishida, "Electrooptic Effects in an InGaAs/InAlAs Multiquantum Well Structure," IEEE Photon. Technol. Lett. 4, 10 (1992). [CrossRef]

Arai, S.
Bhattacharya, P.
Brock, T.
Burrus, C. A.
Chemla, D. S.
Chen, J. X.
Cong, D.Y.
Damer, T. C.
Davis, L.
Dutt, M. V. G
Fiore, A.
Gauthier-Lafaye, O.
Ghosh, S.
Gossard, A. C.
Huffaker, D. L.
Inoue, H.
Ishida, K.
Kamath, K.
Ko, K. K.
Laghumavarapu, R. B.
Lam, Y.
Lee, S. S.
Lemaître, A.
Lenihan, A.S
Li, W.-Q.
Liu, Y. Z.
Markus, A.
Martinez, A.
Merghem, K.
Miard, A.
Miller, D. A. B.
Moreau, G.
Nishimura, S.
Nuntawong, N.
Pang, S. W.
Pappert, S. A.
Paranthoen, C.
Phillips, J.
Platz, C.
Qasaimeh, O
Qasaimeh, O.
Ramaswamy, R. V.
Sano, H.
Schmitt-Rink, S.
Shimomura, K.
Steel, D. G
Suematsu, Y.
Sun, C. K.
Sun, H. C.
Sundaram, V. S.
Tatebayashi, J.
Voisin, P.
Weigmann, W.
Welstand, R. B.
Wood, T. H.
Yu, P. K. L.
Zhu, J. T.

Appl. Phys. Lett.

L. Davis, K. K. Ko, W.-Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, and P. Bhattacharya, "Photoluminescence and electro-optic properties of small (25-35 nm diameter) quantum boxes," Appl. Phys. Lett. 62, 2766 (1993). [CrossRef]
O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips, "Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots," Appl. Phys. Lett. 72, 1275 (1998). [CrossRef]
G. Moreau, A. Martinez, D.Y. Cong, K. Merghem, A. Miard, A. Lemaître, P. Voisin, A. Ramdane I. Krestnikov, A. R. Kovsh M. Fischer, and J. Koeth, "Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 µm," Appl. Phys. Lett. 91, 91118 (2007). [CrossRef]
A. Markus, J. X. Chen, C. Paranthoen, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett. 82, 1818 (2003). [CrossRef]

Electron. Lett.

J. Tatebayashi, R. B. Laghumavarapu, N. Nuntawong, and D. L. Huffaker, "Measurement of electro-optic coefficients of 1.3 ?m self-assembled InAs/GaAs quantum dots," Electron. Lett. 43, 410-412 (2007). [CrossRef]

IEEE J. Quantum Electron.

K. Shimomura, S. Arai, and Y. Suematsu, "Operational wavelength range of GaInAs(P)-lnP intersectional optical switch using fieldinduced electrooptic effect in low-dimensional quantum-well structures,’’IEEE J. Quantum Electron. 28, 471-478 (1992). [CrossRef]
S. S. Lee, R. V. Ramaswamy, and V. S. Sundaram, "Analysis and design of high-speed high-efficiency GaAs-AlGaAs double-heterostructure waveguide phase modulator," IEEE J. Quantum Electron. 27, 726 (1991). [CrossRef]

IEEE Photon. Technol. Lett.

R. B. Welstand, S. A. Pappert, C. K. Sun, J. T. Zhu, Y. Z. Liu, and P. K. L. Yu, "Dual-function electroabsorption waveguide modulator/detector for optoelectronic transceiver applications," IEEE Photon. Technol. Lett. 8, 1540-1542 (1996). [CrossRef]
S. Nishimura, H. Inoue, H. Sano, and K. Ishida, "Electrooptic Effects in an InGaAs/InAlAs Multiquantum Well Structure," IEEE Photon. Technol. Lett. 4, 10 (1992). [CrossRef]

J. Vac. Sci. Technol. B

S. Ghosh, A. S Lenihan, M. V. G Dutt, O Qasaimeh, D. G Steel, and P. Bhattacharya, "Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots," J. Vac. Sci. Technol. B 19, 1455-1458 (2001). [CrossRef]

Phys. Rev. B

S. Schmitt-Rink, D. A. B. Miller, and D. S. Chemla, "Theory of the linear and nonlinear optical properties of semiconductor microcrystallites," Phys. Rev. B 35, 8113 (1987). [CrossRef]

Phys. Rev. Lett.

D. A. B. Miller, D. S. Chemla, T. C. Damer, A. C. Gossard, W. Weigmann, T. H. Wood, and C. A. Burrus, "Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect," Phys. Rev. Lett. 53, 2173 (1984). [CrossRef]

Other

L. Lembo, F. Alvares, D. Lo, C. Tu, P. Wisseman, C. Zmudzinski, and J. Brock, "Optical electroabsorption modulators for wideband, linear, low-insertion loss photonic links," Proc. SPIE Photon. Device Eng. Dual-Use Appl. 2481, 185-196 (1995).

2007, Tatebayashi, Electron. Lett.
2007, Moreau, Appl. Phys. Lett.
2003, Markus, Appl. Phys. Lett.
2001, Ghosh, J. Vac. Sci. Technol. B
1998, Qasaimeh, Appl. Phys. Lett.
1996, Welstand, IEEE Photon. Technol. Lett.
1993, Davis, Appl. Phys. Lett.
1992, Shimomura, IEEE J. Quantum Electron.
1992, Nishimura, IEEE Photon. Technol. Lett.
1991, Lee, IEEE J. Quantum Electron.
1987, Schmitt-Rink, Phys. Rev. B
1984, Miller, Phys. Rev. Lett.

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