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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 6 — Mar. 17, 2008
  • pp: 3738–3743

Trimming of silicon ring resonator by electron beam induced compaction and strain

J. Schrauwen, D. Van Thourhout, and R. Baets  »View Author Affiliations


Optics Express, Vol. 16, Issue 6, pp. 3738-3743 (2008)
http://dx.doi.org/10.1364/OE.16.003738


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Abstract

Silicon is becoming the preferable platform for future integrated components, mostly due to the mature and reliable fabrication capabilities of electronics industry. Nevertheless, even the most advanced fabrication technologies suffer from non-uniformity on wafer scale and on chip scale, causing variations in the critical dimensions of fabricated components. This is an important issue since photonic circuits, and especially cavities such as ring resonators, are extremely sensitive to these variations. In this paper we present a way to circumvent these problems by trimming using electron beam induced compaction of oxide in silicon on insulator. Volume compaction of the oxide cladding causes both changes in the refractive index and creates strain in the silicon lattice. We demonstrate a resonance wavelength red shift 4.91 nm in a silicon ring resonator.

© 2008 Optical Society of America

OCIS Codes
(220.3740) Optical design and fabrication : Lithography
(230.3120) Optical devices : Integrated optics devices

ToC Category:
Optical Devices

History
Original Manuscript: January 17, 2008
Revised Manuscript: February 5, 2008
Manuscript Accepted: March 3, 2008
Published: March 6, 2008

Citation
J. Schrauwen, D. Van Thourhout, and R. Baets, "Trimming of silicon ring resonator by electron beam induced compaction and strain," Opt. Express 16, 3738-3743 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-6-3738


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