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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 6 — Mar. 17, 2008
  • pp: 3798–3806

The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures

S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang  »View Author Affiliations


Optics Express, Vol. 16, Issue 6, pp. 3798-3806 (2008)
http://dx.doi.org/10.1364/OE.16.003798


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Abstract

We report a transient lateral photoeffect (LPE) in thin metallic Co films deposited on n-type Si substrates with native SiO2 surfaces. Under the nonuniform irradiation of a laser beam, the lateral phtovoltage (LPV) shows high sensitivity to the laser position in the metal film plane. This effect can be interpreted by the metal-semiconductor (MS) junction formed between metal and semiconductor. The LPV depends significantly on the thickness of Co film. The position sensitivity shows a peak value of 42.6 mV/mm for Co2.8 nm-SiO2-Si and decreases greatly with the increase of the Co film thickness. We explain that by the shorting effect of the metallic film.

© 2008 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.5350) Detectors : Photovoltaic
(310.6845) Thin films : Thin film devices and applications

ToC Category:
Detectors

History
Original Manuscript: December 3, 2007
Revised Manuscript: February 12, 2008
Manuscript Accepted: February 20, 2008
Published: March 7, 2008

Citation
S. Q. Xiao, H. Wang, Z. C. Zhao, Y. Z. Gu, Y. X. Xia, and Z. H. Wang, "The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures," Opt. Express 16, 3798-3806 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-6-3798


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