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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 7 — Mar. 31, 2008
  • pp: 4895–4900

Twofold coordinated Ge defects induced by gamma-ray irradiation in Ge-doped SiO2

A. Alessi, S. Agnello, F. M. Gelardi, S. Grandi, A. Magistris, and R. Boscaino  »View Author Affiliations

Optics Express, Vol. 16, Issue 7, pp. 4895-4900 (2008)

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We report an experimental study by photoluminescence, optical absorption and Electron Paramagnetic Resonance measurements on the effects of exposure of Ge-doped amorphous SiO2 to γ ray radiation at room temperature. We have evidenced that irradiation at doses of the order of 1 MGy is able to generate Ge-related defects, recognizable from their optical properties as twofold coordinated Ge centers. Until now, such centers, responsible for photosensitivity of Ge-doped SiO2, have been induced only in synthesis procedures of materials. The found result evidences a role played by γ radiation in generating photosensitive defects and could furnish a novel basis for photosensitive pattern writing through ionizing radiation.

© 2008 Optical Society of America

OCIS Codes
(160.2220) Materials : Defect-center materials
(160.2750) Materials : Glass and other amorphous materials
(350.5610) Other areas of optics : Radiation
(060.3738) Fiber optics and optical communications : Fiber Bragg gratings, photosensitivity
(160.5335) Materials : Photosensitive materials

ToC Category:

Original Manuscript: February 19, 2008
Revised Manuscript: March 18, 2008
Manuscript Accepted: March 18, 2008
Published: March 26, 2008

A. Alessi, S. Agnello, F. M. Gelardi, S. Grandi, A. Magistris, and R. Boscaino, "Twofold co-ordinated Ge defects induced by gamma-ray irradiation in Ge-doped SiO2," Opt. Express 16, 4895-4900 (2008)

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