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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 7 — Mar. 31, 2008
  • pp: 5136–5140

Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon

Jun Yang and Pallab Bhattacharya  »View Author Affiliations


Optics Express, Vol. 16, Issue 7, pp. 5136-5140 (2008)
http://dx.doi.org/10.1364/OE.16.005136


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Abstract

The monolithic integration of epitaxially-grown InGaAs/GaAs self-organized quantum dot lasers with hydrogenated amorphous silicon (a:Si-H) waveguides on silicon substrates is demonstrated. Hydrogenated amorphous silicon waveguides, formed by plasma-enhanced-chemical-vapor deposition (PECVD), exhibit a propagation loss of ~10 dB/cm at a wavelength of 1.05 µm. The laser-waveguide coupling, with coupling coefficient of 22%, is achieved through a 3.2 µm-width groove etched by focused-ion-beam (FIB) milling which creates high-quality etched GaAs facets.

© 2008 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.7370) Optical devices : Waveguides
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Lasers and Laser Pointers

History
Original Manuscript: December 18, 2007
Revised Manuscript: March 8, 2008
Manuscript Accepted: March 20, 2008
Published: March 28, 2008

Citation
Jun Yang and Pallab Bhattacharya, "Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon," Opt. Express 16, 5136-5140 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-7-5136


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