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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 8 — Apr. 14, 2008
  • pp: 5199–5205

Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

T. Tawara, H. Kamada, Y. -H. Zhang, T. Tanabe, N. I. Cade, D. Ding, S. R. Johnson, H. Gotoh, E. Kuramochi, M. Notomi, and T. Sogawa  »View Author Affiliations

Optics Express, Vol. 16, Issue 8, pp. 5199-5205 (2008)

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We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

© 2008 Optical Society of America

OCIS Codes
(350.4238) Other areas of optics : Nanophotonics and photonic crystals
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Photonic Crystals

Original Manuscript: December 19, 2007
Revised Manuscript: February 29, 2008
Manuscript Accepted: March 28, 2008
Published: April 1, 2008

T. Tawara, H. Kamada, Y-H Zhang, T. Tanabe, N. I. Cade, D. Ding, S. R. Johnson, H. Gotoh, E. Kuramochi, M. Notomi, and T. Sogawa, "Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities," Opt. Express 16, 5199-5205 (2008)

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