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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 8 — Apr. 14, 2008
  • pp: 5218–5226

Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators

Gui-Rong Zhou, Michael W. Geis, Steven J. Spector, Fuwan Gan, Matthew E. Grein, Robert T. Schulein, Jason S. Orcutt, Jung U. Yoon, Donna M. Lennon, Theodore M. Lyszczarz, Erich P. Ippen, and Franz X. Kärtner  »View Author Affiliations


Optics Express, Vol. 16, Issue 8, pp. 5218-5226 (2008)
http://dx.doi.org/10.1364/OE.16.005218


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Abstract

We present a systematic study of Mach-Zehnder silicon optical modulators based on carrier-injection. Detailed comparisons between modeling and measurement results are made with good agreement obtained for both DC and AC characteristics. A figure of merit, static VπL, as low as 0.24Vmm is achieved. The effect of carrier lifetime variation with doping concentration is explored and found to be important for the modulator characteristics.

© 2008 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.2090) Optical devices : Electro-optical devices
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Optoelectronics

History
Original Manuscript: January 17, 2008
Revised Manuscript: March 22, 2008
Manuscript Accepted: March 25, 2008
Published: April 1, 2008

Citation
Gui-rong Zhou, Michael W. Geis, Steven J. Spector, Fuwan Gan, Matthew E. Grein, Robert T. Schulein, Jason S. Orcutt, Jung U. Yoon, Donna M. Lennon, Theodore M. Lyszczarz, Erich P. Ippen, and Franz X. Käertner, "Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators," Opt. Express 16, 5218-5226 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-8-5218


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