290-fs pulses from a semiconductor disk laser
Optics Express, Vol. 16, Issue 8, pp. 5770-5775 (2008)
http://dx.doi.org/10.1364/OE.16.005770
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Abstract
Transform-limited pulses as short as 290 fs at 1036 nm are generated by a diode-pumped semiconductor disk laser. The all-semiconductor laser employs a graded-gap-barrier design in the gain section. A fast saturable absorber mirror serves as a passive mode-locker. No further elements for internal or external dispersion control are required.
© 2008 Optical Society of America
OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7260) Lasers and laser optics : Vertical cavity surface emitting lasers
ToC Category:
Lasers and Laser Optics
History
Original Manuscript: December 14, 2007
Revised Manuscript: February 29, 2008
Manuscript Accepted: March 26, 2008
Published: April 10, 2008
Citation
Peter Klopp, Florian Saas, Martin Zorn, Markus Weyers, and Uwe Griebner, "290-fs pulses from a semiconductor disk laser," Opt. Express 16, 5770-5775 (2008)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-8-5770
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