Abstract

We propose and demonstrate evanescently-decoupled, solid-angle-optimized distributed Bragg reflectors (DBRs) for AlGaInP light-emitting diodes (LEDs). The thickness of each DBR layer is tuned to the wavelength slightly longer than the emission peak of the active medium in order to maximize the radiated power integrated over the top surface. In addition, to increase the horizontal radiation through the side facets, the glancing-angle reflectivity at the AlInP/AlAs interface is improved by employing an AlAs layer thicker than the attenuation length of the evanescent field. With the improved DBR, the integrated output power of AlGaInP LEDs is enhanced by a factor of 1.9 in comparison to those of LEDs with conventional DBRs. Additional 1.25-fold enhancement is observed by incorporating an square-lattice hole array (a=1200nm) into the top GaP surface by a conventional photolithography.

© 2008 Optical Society of America

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History
Original Manuscript: February 11, 2008
Manuscript Accepted: April 9, 2008
Revised Manuscript: April 9, 2008
Published: April 14, 2008

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Author Affiliations

Ju-Young Kim

, Korea Advanced Institute of Science and Technology

Kyung W. Park, Youngho Park

EPIPLUS CO., LTD

Yong-Hee Lee

Korea Advanced Institute of Science and Technology

Sun-Kyung Kim, Hyun K. Cho, Kyung K. Park, Junho Jang, Jeong S. Lee

LG Electronics Institute of Technology

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