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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 16, Iss. 9 — Apr. 28, 2008
  • pp: 6507–6514

Longwave plasmonics on doped silicon and silicides

Richard Soref, Robert E. Peale, and Walter Buchwald  »View Author Affiliations

Optics Express, Vol. 16, Issue 9, pp. 6507-6514 (2008)

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The realization of plasmo-electronic integrated circuits in a silicon chip will be enabled by two new plasmonic materials that are proposed and modeled in this article. The first is ion-implanted Si (n-type or p-type) at the surface of an intrinsic Si chip. The second is a thin-layer silicide such as Pd2Si, NiSi, PtSi2 WSi2 or CoSi2 formed at the Si chip surface. For doping concentrations of 1020 cm-3 and 1021 cm-3, our dispersion calculations show that bound surface plasmon polaritons will propagate with low loss on stripe-shaped plasmonic waveguides over the 10 to 55 µm and 2.8 to 15 µm wavelength ranges, respectively. For Pd2Si/Si plasmonic waveguides, the wavelength range of 0.5 to 7.5 µm is useful and here the propagation lengths are 1 to 2300 µm. For both doped and silicided guides, the SPP mode field extends much more into the air above the stripe than it does into the conductive stripe material.

© 2008 Optical Society of America

OCIS Codes
(160.3130) Materials : Integrated optics materials
(240.6680) Optics at surfaces : Surface plasmons
(310.2790) Thin films : Guided waves
(160.3918) Materials : Metamaterials
(250.5403) Optoelectronics : Plasmonics

ToC Category:
Optics at Surfaces

Original Manuscript: February 28, 2008
Revised Manuscript: April 14, 2008
Manuscript Accepted: April 16, 2008
Published: April 23, 2008

Richard Soref, Robert E. Peale, and Walter Buchwald, "Longwave plasmonics on doped silicon and silicides," Opt. Express 16, 6507-6514 (2008)

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