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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 1 — Jan. 5, 2009
  • pp: 185–192

Plasmon-enhanced emission from optically-doped MOS light sources

Aaron C. Hryciw, Young Chul Jun, and Mark L. Brongersma  »View Author Affiliations

Optics Express, Vol. 17, Issue 1, pp. 185-192 (2009)

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We evaluate the spontaneous emission rate (Purcell) enhancement for optically-doped metal–dielectric–semiconductor light-emitting structures by considering the behavior of a semiclassical oscillating point dipole placed within the dielectric layer. For a Ag–SiO2–Si structure containing emitters at the center of a 20-nm-thick SiO2 layer, spontaneous emission rate enhancements of 40 to 60 can be reached in the wavelength range of 600 to 1800 nm, far away from the surface plasmon resonance; similar enhancements are also possible if Al is used instead of Ag. For dipoles contained in the thin oxide layer of a Ag–SiO2–Si–SiO2 structure, the emission exhibits strong preferential coupling to a single well-defined Si waveguide mode. This work suggests a means of designing a new class of power-efficient, high-modulation-speed, CMOS-compatible optical sources that take full advantage of the excellent electrical properties and plasmon-enhanced optical properties afforded by MOS devices.

© 2009 Optical Society of America

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(160.3900) Materials : Metals
(160.6000) Materials : Semiconductor materials
(230.6080) Optical devices : Sources
(240.6680) Optics at surfaces : Surface plasmons
(250.5403) Optoelectronics : Plasmonics

ToC Category:

Original Manuscript: October 16, 2008
Revised Manuscript: December 19, 2008
Manuscript Accepted: December 22, 2008
Published: December 24, 2008

Aaron Hryciw, Young Chul Jun, and Mark L. Brongersma, "Plasmon-enhanced emission from optically-doped MOS light sources," Opt. Express 17, 185-192 (2009)

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