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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 10 — May. 11, 2009
  • pp: 7831–7836

Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission

Michael Moewe, Linus C. Chuang, Shanna Crankshaw, Kar Wei Ng, and Connie Chang-Hasnain  »View Author Affiliations

Optics Express, Vol. 17, Issue 10, pp. 7831-7836 (2009)

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InxGa1-xAs wurtzite nanoneedles are grown without catalysts on silicon substrates with x ranging from zero to 0.15 using low-temperature metalorganic chemical vapor deposition. The nanoneedles assume a 6°-9° tapered shape, have sharp 2~5 nm tips, are 4 μm in length and 600 nm wide at the base. The micro-photoluminescence peaks exhibit redshifts corresponding to their increased indium incorporation. Core-shell InGaAs/GaAs layered quantum well structures are grown which exhibit quantum confinement of carriers, and emission below the silicon bandgap.

© 2009 OSA

OCIS Codes
(250.5230) Optoelectronics : Photoluminescence
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:

Original Manuscript: January 6, 2009
Revised Manuscript: April 12, 2009
Manuscript Accepted: April 20, 2009
Published: April 28, 2009

Michael Moewe, Linus C. Chuang, Shanna Crankshaw, Kar Wei Ng, and Connie Chang-Hasnain, "Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission," Opt. Express 17, 7831-7836 (2009)

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