Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals
Optics Express, Vol. 17, Issue 11, pp. 8795-8804 (2009)
http://dx.doi.org/10.1364/OE.17.008795
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Abstract
Far-field distributions of GaN-based photonic crystal (PhC) film-transferred light-emitting diodes (FT-LEDs) were investigated. The thickness of the device is about 840 nm. The emission wavelength is around 520 nm. The PhC region is a square lattice with a/λ around 0.5. Angular-resolved measurements in the Γ-X and Γ-M directions were made in the polarized-resolved manner. Guided mode extraction behavior in agreement with the two-dimensional free-photon band calculation was observed. In addition, the pseudo-TM behavior for the non-collinearly coupled modes was observed. The azimuthal-mapping of the angular-resolved spectra revealed the evolution of the collinearly and the non-collinearly coupled modes. Furthermore, the light enhancement of ~2.7x and the collimation angle about 102.3° were achieved.
© 2009 Optical Society of America
OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.5298) Optical devices : Photonic crystals
ToC Category:
Photonic Crystals
History
Original Manuscript: March 2, 2009
Revised Manuscript: May 4, 2009
Manuscript Accepted: May 5, 2009
Published: May 11, 2009
Citation
Chun-Feng Lai, Jim-Yong Chi, Hao-Chung Kuo, Hsi-Hsuan Yen, Chia-En Lee, Chia-Hsin Chao, Han-Tsung Hsueh, and Wen-Yung Yeh, "Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals," Opt. Express 17, 8795-8804 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-11-8795
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