1.3-µm optically-pumped semiconductor disk laser by wafer fusion

doi:10.1364/OE.17.009047

1.3-µm optically-pumped semiconductor disk laser by wafer fusion

Jari Lyytikäinen, Jussi Rautiainen, Lauri Toikkanen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg G. Okhotnikov »View Author Affiliations

Optics Express, Vol. 17, Issue 11, pp. 9047-9052 (2009)
http://dx.doi.org/10.1364/OE.17.009047

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Abstract

We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 µm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 °C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures.

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: March 31, 2009
Revised Manuscript: May 4, 2009
Manuscript Accepted: May 11, 2009
Published: May 14, 2009

Citation
Jari Lyytikäinen, Jussi Rautiainen, Lauri Toikkanen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg G. Okhotnikov, "1.3-µm optically-pumped semiconductor disk laser by wafer fusion," Opt. Express 17, 9047-9052 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-11-9047

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References

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997). [CrossRef]
J. Chilla, St. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High-power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).
J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 645109–1 (2007).
V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009). [CrossRef]
J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004). [CrossRef]
A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004). [CrossRef]
A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007). [CrossRef]
J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, ”2.6 W optically-pumped semiconductor disk laser operating at 1.57-?m using wafer fusion,” 16,21881–21886 (2008).
A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997). [CrossRef]
A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997). [CrossRef]
Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000). [CrossRef]
M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant Periodic Gain Surface-Emitting Semiconductor Lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989). [CrossRef]

Abraham, P.
Achtenhagen, M.
Babic, D. I.
Behrend, J.
Berseth, C. A.
Berseth, C.-A.
Black, A.
Bowers, J. E.
Brennan, T. M.
Brueck, S. R. J.
Burns, D.
Caliman, A.
Calvez, S.
Carlin, J. F.
Chang, Y.
Dawson, M. D.
Fernandez, J.
Guina, M.
Hakimi, F.
Hammons, B. E.
Härkönen, A.
Hawkins, A. R.
Holmes, A. L.
Hopkins, J.-M.
Hu, E. L.
Iakovlev, V.
Jeon, C. W.
Jouhti, T.
Kapon, E.
Korpijärvi, V.-M.
Kuznetsov, M.
Liau, Z. L.
Lyytikäinen, J.
Margalit, N. M.
McInerney, J. G.
Mereuta, A.
Mircea, A.
Mooradian, A.
Okhotnikov, O.
Okhotnikov, O. G.
Osinski, M.
Pessa, M.
Puustinen, J.
Raja, M. Y. A.
Rautiainen, J.
Royo, P.
Rudra, A.
Schaus, C. F.
Sirbu, A.
Smith, S. A.
Sprague, R.
Sun, H. D.
Suruceanu, G.
Syrbu, A.
Syrbu, A. V.
Tukiainen, A.
Tuomisto, P.

Appl. Phys. Lett.

Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000). [CrossRef]

Electron. Lett.

A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, and E. Kapon, “InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion,” Electron. Lett. 33(10), 866–868 (1997). [CrossRef]
J.-M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D. Dawson, T. Jouhti, and M. Pessa, “0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 40(1), 30–31 (2004). [CrossRef]

IEEE J. Quantum Electron.

M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, “Resonant Periodic Gain Surface-Emitting Semiconductor Lasers,” IEEE J. Quantum Electron. 25(6), 1500–1512 (1989). [CrossRef]

IEEE J. Sel. Top. Quantum Electron.

A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Y. Chang, P. Abraham, J. E. Bowers, and E. L. Hu, “Wafer fusion: Material issues and device results,” IEEE J. Sel. Top. Quantum Electron. 3(3), 943–951 (1997). [CrossRef]

IEEE Photon. Technol. Lett.

M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-Power (0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photon. Technol. Lett. 9(8), 1063–1065 (1997). [CrossRef]
A. Syrbu, A. Mircea, A. Mereuta, A. Caliman, C.-A. Berseth, G. Suruceanu, V. Iakovlev, M. Achtenhagen, A. Rudra, and E. Kapon, “1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs,” IEEE Photon. Technol. Lett. 16(5), 1230–1232 (2004). [CrossRef]
A. Mircea, A. Caliman, V. Iakovlev, A. Mereuta, G. Suruceanu, C.-A. Berseth, P. Royo, A. Syrbu, and E. Kapon, “Cavity mode - Gain peak trade-off for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70 °C,” IEEE Photon. Technol. Lett. 19(2), 121–123 (2007). [CrossRef]

J. Cryst. Growth

V.-M. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, “MBE grown GaInNAs-based multi-Watt disk lasers,” J. Cryst. Growth 311(7), 1868–1871 (2009). [CrossRef]

Other

J. Chilla, St. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, “High-power optically pumped semiconductor lasers,” in Solid State Lasers XIII: Technology and Devices, R. Scheps and H. J. Hoffman, eds., Proc. SPIE 5332, 143–150 (2004).
J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, “Recent advances in optically pumped semiconductor lasers,” Proc. SPIE 645109–1 (2007).
J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, ”2.6 W optically-pumped semiconductor disk laser operating at 1.57-?m using wafer fusion,” 16,21881–21886 (2008).

2009, Korpijärvi, J. Cryst. Growth
2008, Rautiainen,
2007, Mircea, IEEE Photon. Technol. Lett.
2004, Hopkins, Electron. Lett.
2004, Syrbu, IEEE Photon. Technol. Lett.
2000, Liau, Appl. Phys. Lett.
1997, Black, IEEE J. Sel. Top. Quantum Electron.
1997, Syrbu, Electron. Lett.
1997, Kuznetsov, IEEE Photon. Technol. Lett.
1989, Raja, IEEE J. Quantum Electron.

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