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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 11 — May. 25, 2009
  • pp: 9047–9052

1.3-µm optically-pumped semiconductor disk laser by wafer fusion

Jari Lyytikäinen, Jussi Rautiainen, Lauri Toikkanen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg G. Okhotnikov  »View Author Affiliations

Optics Express, Vol. 17, Issue 11, pp. 9047-9052 (2009)

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We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 µm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 °C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures.

© 2009 OSA

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: March 31, 2009
Revised Manuscript: May 4, 2009
Manuscript Accepted: May 11, 2009
Published: May 14, 2009

Jari Lyytikäinen, Jussi Rautiainen, Lauri Toikkanen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg G. Okhotnikov, "1.3-µm optically-pumped semiconductor disk laser by wafer fusion," Opt. Express 17, 9047-9052 (2009)

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