Terahertz pulse induced intervalley scattering in photoexcited GaAs
Optics Express, Vol. 17, Issue 12, pp. 9620-9629 (2009)
http://dx.doi.org/10.1364/OE.17.009620
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Abstract
Nonlinear transient absorption bleaching of intense few-cycle terahertz (THz) pulses is observed in photoexcited GaAs using optical-pump – THz-probe techniques. A simple model of the electron transport dynamics shows that the observed nonlinear response is due to TH-zelectric-field-induced intervalley scattering over sub-picosecond time scales as well as an increase in the intravalley scattering rate attributed to carrier heating. Furthermore, the nonlinear nature of the THz pulse transmission at high peak fields leads to a measured terahertz conductivity in the photoexcited GaAs that deviates significantly from the Drude behavior observed at low THz fields, emphasizing the need to explore nonlinear THz pulse interactions with materials in the time domain.
© 2009 Optical Society of America
OCIS Codes
(300.6500) Spectroscopy : Spectroscopy, time-resolved
(320.7110) Ultrafast optics : Ultrafast nonlinear optics
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
(300.6495) Spectroscopy : Spectroscopy, teraherz
ToC Category:
Spectroscopy
History
Original Manuscript: April 22, 2009
Revised Manuscript: May 19, 2009
Manuscript Accepted: May 19, 2009
Published: May 22, 2009
Citation
F. H. Su, F. Blanchard, G. Sharma, L. Razzari, A. Ayesheshim, T. L. Cocker, L. V. Titova, T. Ozaki, J.-C. Kieffer, R. Morandotti, M. Reid, and F. A. Hegmann, "Terahertz pulse induced intervalley scattering in photoexcited GaAs," Opt. Express 17, 9620-9629 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-12-9620
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References
- S. D. Ganichev and W. Prettl, Intense Terahertz Excitation of Semiconductors (Oxford University Press, Oxford, 2006).
- A. Mayer and F. Keilmann, "Far-infrared nonlinear optics. II. χ(3) contributions from the dynamics of free carriers in semiconductors," Phys. Rev. B 33, 6962 (1986). [CrossRef]
- A. G. Markelz and E. G. Gwinn, "Nonlinear response of quantum-confined electrons in nonparabolic subbands," J. Appl. Phys. 80, 2533 (1996). [CrossRef]
- A. G. Markelz, N. G. Asmar, B. Brar, and E. G. Gwinn, "Interband impact ionization by terahertz illumination of InAs heterostructures," Appl. Phys. Lett. 69, 3975 (1996). [CrossRef]
- K. B. Nordstrom, K. Johnsen, S. J. Allen, A.-P. Jauho, B. Birnir, J. Kono, T. Noda, H. Akiyama, and H. Sakaki, "Excitonic dynamical Franz-Keldysh effect," Phys. Rev. Lett. 81, 457 (1998). [CrossRef]
- B. E. Cole, J. B. Williams, B. T. King, M. S. Sherwin, and C. R. Stanley, "Coherent manipulation of semiconductor quantum bits with terahertz radiation," Nature 410, 60 (2001). [CrossRef] [PubMed]
- P. Gaal, K. Reimann, M. Woerner, T. Elsaesser, R. Hey, and K. H. Ploog, "Nonlinear terahertz response of n-type GaAs," Phys. Rev. Lett. 96, 187402 (2006). [CrossRef] [PubMed]
- Y. Shen, T. Watanabe, D. A. Arena, C.-C. Kao, J. B. Murphy, T.Y. Tsang, X. J. Wang, and G. L. Carr, "Nonlinear cross-phase modulation with intense single-cycle terahertz pulses," Phys. Rev. Lett. 99, 043901 (2007). [CrossRef] [PubMed]
- K.-L. Yeh, M. C. Hoffmann, J. Hebling, and K. A. Nelson, "Generation of 10 μJ ultrashort terahertz pulses by optical rectification," Appl. Phys. Lett. 90, 171121 (2007). [CrossRef]
- F. Blanchard, L. Razzari, H.-C. Bandulet, G. Sharma, R. Morandotti, J.-C Kieffer, T. Ozaki, M. Reid, H. F. Tiedje, H. K. Haugen, and F. A. Hegmann, "Generation of 1.5 μJ single-cycle terahertz pulses by optical rectification from a large aperture ZnTe crystal," Opt. Express 15, 13212 (2007). [CrossRef] [PubMed]
- K. Y. Kim, J. H. Glownia, A. J. Taylor, and G. Rodriguez, "Terahertz emission from ultrafast ionizing air in symmetry-broken laser fields," Opt. Express 15, 4577 (2007). [CrossRef] [PubMed]
- J. Hebling, K.-L. Yeh, M. C. Hoffmann, and K. A. Nelson, "High-power THz generation, THz nonlinear optics, and THz nonlinear spectroscopy," IEEE J. Sel. Top. Quantum Electron. 14, 345 (2008). [CrossRef]
- A. G. Stepanov, L. Bonacina, S. V. Chekalin, and J.-P. Wolf, "Generation of 30 μJ single-cycle terahertz pulses at 100 Hz repetition rate by optical rectification," Opt. Lett. 33, 2497 (2008). [CrossRef] [PubMed]
- Y. Shen, G. L. Carr, J. B. Murphy, T. Y. Tsang, X. Wang, and X. Yang, "Spatiotemporal control of ultrashort laser pulses using intense single-cycle terahertz pulses," Phys. Rev. A 78, 043813 (2008). [CrossRef]
- J. R. Danielson, Y.-S. Lee, J. P. Prineas, J. T. Steiner, M. Kira, and S. W. Koch, "Interaction of strong single-cycle terahertz pulses with semiconductor quantum wells," Phys. Rev. Lett. 99, 237401 (2007). [CrossRef]
- P. Gaal, W. Kuehn, K. Reimann, M. Woerner, T. Elsaesser, R. Hey, J. S. Lee, and U. Schade, "Carrier-wave Rabi flopping on radiatively coupled shallow donor transitions in n-type GaAs," Phys. Rev. B 77, 235204 (2008). [CrossRef]
- H. Wen, M. Wiczer, and A. M. Lindenberg, "Ultrafast electron cascades in semiconductors driven by intense femtosecond terahertz pulses," Phys. Rev. B 78, 125203 (2008). [CrossRef]
- M. C. Hoffmann, J. Hebling, H. Y. Hwang, K.-L. Yeh, and K. A. Nelson, "Impact ionization in InSb probed by terahertz pump-terahertz probe spectroscopy," Phys. Rev. B 79, 161201(R) (2009). [CrossRef]
- L. Razzari, F. H. Su, G. Sharma, F. Blanchard, A. Ayesheshim, H.-C. Bandulet, R. Morandotti, J.-C. Kieffer, T. Ozaki, M. Reid, and F. A. Hegmann, "Nonlinear ultrafast modulation of the optical absorption of intense few-cycle terahertz pulses in n-doped semiconductors," Phys. Rev. B 79, 193204 (2009). [CrossRef]
- M. C. Nuss and J. Orenstein, "Terahertz time-domain spectroscopy," in Millimter and Submillimeter Wave Spectroscopy of Solids (Springer-Verlag, Berlin, 1998), Chap. 2. [CrossRef]
- M. C. Nuss, D. H. Auston, and F. Capasso, "Direct subpicosecond measurement of carrier mobility of photoexcited electrons in gallium arsenide," Phys. Rev. Lett. 58, 2355 (1987). [CrossRef] [PubMed]
- S. E. Ralph, Y. Chen, J. Woodall, and D. McInturff, "Subpicosecond photoconductivity of In0.53Ga0.47As: Intervalley scattering rates observed via THz spectroscopy," Phys. Rev. B 54, 5568 (1996). [CrossRef]
- M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, "Transient photoconductivity in GaAs as measured by time-resolved terahertz spectroscopy," Phys. Rev. B 62,15764 (2000). [CrossRef]
- R. P. Prasankumar, A. Scopatz, D. J. Hilton, A. J. Taylor, R. D. Averitt, J. M. Zide, and A. C. Gossard, "Carrier dynamics in self-assembled ErAs nanoislands embedded in GaAs measured by optical-pump terahertz-probe spectroscopy," Appl. Phys. Lett. 86, 201107 (2005). [CrossRef]
- D. G. Cooke, F. A. Hegmann, E. C. Young, and T. Tiedje, "Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy," Appl. Phys. Lett. 89, 122103 (2006). [CrossRef]
- Q-L. Zhou, Y. Shi, B. Jin, and C. Zhang, "Ultrafast carrier dynamics and terahertz conductivity of photoexcited GaAs under electric field," Appl. Phys. Lett. 93, 102103 (2008). [CrossRef]
- M. Lundstrom, Fundamentals of Carrier Transport (Cambridge University Press, Cambridge, 2000). [CrossRef]
- M. Grundmann, The Physics of Semiconductors (Springer-Verlag, Berlin, 2006).
- B. E. Foutz, S. K. O'Leary, M. S. Shur, and L. F. Eastman, "Transient electron transport in wurtzite GaN, InN, and AlN," J. Appl. Phys. 85, 7727 (1999). [CrossRef]
- P. N. Saeta, J. F. Federici, B. I. Greene, and D. R. Dykaar, "Intervalley scattering in GaAs and InP probed by pulsed far-infrared transmission spectroscopy," Appl. Phys. Lett. 60, 1477 (1992). [CrossRef]
- K. Blotekjaer, "Transport equations for electrons in two-valley semiconductors," IEEE Trans. Electron Devices 17, 38 (1970). [CrossRef]
- A. M. Anile and S. D. Hern, "Two-valley hydrodynamical models for electron transport in gallium arsenide: Simulation of Gunn oscillations," VLSI Design 15,681 (2002). [CrossRef]
- Errors on all best fit parameters from the model are obtained from the range over which the relative RMS deviation of the fit increases by 10%, which in this case is a change in RMS deviation from 0.070 to 0.077.
- P. C. Becker, H. L. Fragnito, C. H. Brito Cruz, J. Shah, R. L. Fork, J. E. Cunningham, J. E. Henry, and C. V. Shank, "Femtosecond intervalley scattering in GaAs," Appl. Phys. Lett. 53, 2089 (1988). [CrossRef]
- M. C. Hoffmann, J. Hebling, H. Y. Hwang, K.-L. Yeh, and K. A. Nelson, "THz-pump-THz-probe spectroscopy of semiconductors at high field strengths," http://arxiv.org/abs/0904.2516
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