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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 14 — Jul. 6, 2009
  • pp: 11246–11258

Theory for n-type doped, tensile-strained Ge-SixGeySn1-x-y quantum-well lasers at telecom wavelength

Guo-En Chang, Shu-Wei Chang, and Shun Lien Chuang  »View Author Affiliations

Optics Express, Vol. 17, Issue 14, pp. 11246-11258 (2009)

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We propose and develop a theoretical gain model for an n-doped, tensile-strained Ge-Si x Ge y Sn1-x-y quantum-well laser. Tensile strain and n doping in Ge active layers can help achieve population inversion in the direct conduction band and provide optical gain. We show our theoretical model for the bandgap structure, the polarization-dependent optical gain spectrum, and the free-carrier absorption of the n-type doped, tensile-strained Ge quantum-well laser. Despite the free-carrier absorption due to the n-type doping, a significant net gain can be obtained from the direct transition. We also present our waveguide design and calculate the optical confinement factors to estimate the modal gain and predict the threshold carrier density.

© 2009 Optical Society of America

OCIS Codes
(140.3380) Lasers and laser optics : Laser materials
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Lasers and Laser Optics

Original Manuscript: March 20, 2009
Revised Manuscript: June 18, 2009
Manuscript Accepted: June 18, 2009
Published: June 22, 2009

Guo-En Chang, Shu-Wei Chang, and Shun L. Chuang, "Theory for n-type doped, tensile-strained Ge–SixGeySn1−x−y quantum-well lasers at telecom wavelength," Opt. Express 17, 11246-11258 (2009)

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