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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 14 — Jul. 6, 2009
  • pp: 11309–11314

193nm Superlens Imaging Structure for 20nm Lithography Node

Zhong Shi, Vladimir Kochergin, and Fei Wang  »View Author Affiliations


Optics Express, Vol. 17, Issue 14, pp. 11309-11314 (2009)
http://dx.doi.org/10.1364/OE.17.011309


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Abstract

We are showing that a 20nm lithography resolution is theoretically feasible at a 193nm illumination wavelength if employing aluminum (Al) superlens structure with index matching layer. It is illustrated that transmissivity of evanescent waves for certain wavevector bands can be enhanced by an index matching layer. It is further shown a minimal resolution of ~λ/10 can be achieved by appropriately engineering mask material and superlens structure. A depth of focus of several nanometers is predicted to be possible for a periodic structure with 20nm half pitch. Assistant features were adopted in superlens structure to successfully suppress the side lobes and resolve a 20nm two-slit structure.

© 2009 Optical Society of America

OCIS Codes
(240.6680) Optics at surfaces : Surface plasmons
(110.4235) Imaging systems : Nanolithography

ToC Category:
Imaging Systems

History
Original Manuscript: March 16, 2009
Revised Manuscript: May 15, 2009
Manuscript Accepted: June 15, 2009
Published: June 22, 2009

Citation
Zhong Shi, Vladimir Kochergin, and Fei Wang, "193nm Superlens Imaging Structure for 20nm Lithography Node," Opt. Express 17, 11309-11314 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-14-11309


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