Photoluminescence (PL) behaviour in InN nanocolumns reveal decreasing, increasing and near invariant peak energies (E_PL ) as a function of temperature. Samples, having E_PL ~0.730 eV at 20 K, showed temperature invariance of E_PL . Samples possessing E_PL on the lower and higher energy side of 0.730 eV demonstrate a normal redshift and anomalous blueshift, respectively, with increasing temperature. This temperature evolution can be effectively explained on the basis of a competition between a conventional red shift from lattice dilation, dominant for low carrier density sample, on one hand, and a blue shift of the electron and hole quasi Fermi-level separation, dominant for high carrier density samples, on the other.

© OSA

1. T. L. Tansley and C. P. Foley, “Optical band-gap of indium nitride,” J. Appl. Phys. 59(9), 3241–3244 (1986). [CrossRef]
2. V. Y. Davydov, A. A. Klochikhin, R. P. Seisiyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Grual, “Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap,” Phys. Status Solidi B 229, R1–R3 (2002). [CrossRef]
3. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of the fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
4. J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, S. X. Li, E. E. Haller, H. Lu, and W. J. Schaff, “Temperature dependence of the fundamental band gap of InN,” J. Appl. Phys. 94(7), 4457–4460 (2003). [CrossRef]
5. D. C. Look, H. Lu, W. J. Schaff, J. Jasinski, and Z. Liliental-Weber, “Donor and acceptor concentrations in degenerate InN,” Appl. Phys. Lett. 80(2), 258–260 (2002). [CrossRef]
6. C. Stampfl, C. G. Van de Walle, D. Vogel, P. Krüger, and J. Pollmann, “Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials,” Phys. Rev. B 61(12), R7846–R7849 (2000). [CrossRef]
7. S. Z. Wang, S. F. Yoon, Y. X. Xia, and S. W. Xie, “20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source,” J. Appl. Phys. 95(12), 7998–8001 (2004). [CrossRef]
8. T. Stoica, R. J. Meijers, R. Calarco, T. Richter, E. Sutter, and H. Lüth, “Photoluminescence and intrinsic properties of MBE-grown InN nanowires,” Nano Lett. 6(7), 1541–1547 (2006). [CrossRef] [PubMed]
9. C. H. Shen, H. Y. Chen, H.-W. Lin, S. Gwo, A. A. Klochikhin, and V. Y. Davydov, “Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer,” Appl. Phys. Lett. 88(25), 253104 (2006). [CrossRef]
10. C. L. Hsiao, H. C. Hsu, L. C. Chen, C. T. Wu, C. W. Chen, M. Chen, L. W. Tu, and K. H. Chen, “Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors,” Appl. Phys. Lett. 91(18), 181912 (2007). [CrossRef]
11. I. Mora-Seró, F. Fabregat-Santiago, B. Denier, J. Bisquert, R. Tena-Zaera, J. Elias, and C. Lévy-Clément, “Determination of carrier density of ZnO nanowires by electrochemical techniques,” Appl. Phys. Lett. 89(20), 203117 (2006). [CrossRef]
12. J. T. Chen, C. L. Hsiao, H. C. Hsu, C. T. Wu, C. L. Yeh, P. C. Wei, L. C. Chen, and K. H. Chen, “Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source,” J. Phys. Chem. A 111(29), 6755–6759 (2007). [CrossRef] [PubMed]
13. B. Arnaudov, T. Paskova, P. P. Paskov, B. Magnusson, E. Valcheva, B. Monemar, H. Lu, W. J. Schaff, H. Amano, and I. Akasaki, “Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels,” Phys. Rev. B 69(11), 115216 (2004). [CrossRef]
14. S. P. Fu, T. T. Chen, and Y. F. Chen, “Photoluminescent properties of InN epifilms,” Semicond. Sci. Technol. 21(3), 244–249 (2006). [CrossRef]
15. J. Wu, W. Walukiewicz, S. X. Li, R. Armitage, J. C. Ho, E. R. Weber, E. E. Haller, H. Lu, W. J. Schaff, A. Barcz, and R. Jakiela, “Effects of electron concentration on the optical absorption edge of InN,” Appl. Phys. Lett. 84(15), 2805–2807 (2004). [CrossRef]
16. J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Effects of the narrow band gap on the properties of InN,” Phys. Rev. B 66(20), R201403 (2002). [CrossRef]
17. Y. P. Varshni, “Temperature dependence of energy gap in semiconductors,” Physica 34(1), 149–154 (1967). [CrossRef]
18. D. S. Jiang, Y. Makita, K. Ploog, and H. J. Queisser, “Electrical-properties and photo-luminescence of Te- doped GaAs grown by molecular-beam-epitaxy,” J. Appl. Phys. 53(2), 999–1006 (1982). [CrossRef]
19. A. Raymond, J. L. Robert, and C. Bernard, “Electron effective mass in heavily doped GaAs,” J. Phys. 12, 2289–2293 (1979).
20. V. Lebedev, V. Climalla, T. Baumann, and O. Ambacher, “Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network,” J. Appl. Phys. 100(9), 094903 (2006). [CrossRef]
21. E. S. Koteles and W. R. Datars, “Temperature-dependence of electron on effective mass in InSb,” Phys. Rev. B 9(2), 568–571 (1974). [CrossRef]
22. H. Yokoi, S. Takeyama, and N. Miura, “Anomalous temperature-dependence of the effective mass in n-type PbTe,” Phys. Rev. B 44(12), 6519–6522 (1991). [CrossRef]
23. L. F. J. Piper, T. D. Veal, I. Mahboob, and C. F. McConville, “Temperature invariance of InN electron accumulation,” Phys. Rev. B 70(11), 115333 (2004). [CrossRef]
24. V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, D. A. Kurdyukov, S. V. Ivanov, V. A. Vekshin, F. Bechstedt, J. Furthmüller, J. Aderhold, J. Graul, A. V. Mudryi, H. Harima, A. Hashimoto, A. Yamamoto, and E. E. Haller, “Band Gap of Hexagonal InN and InGaN Alloys,” Phys. Status Solidi B 234, 787–795 (2002). [CrossRef]
25. B. Bansal, A. Kadir, A. Bhattacharya, and V. V. Moshchalkov, “Photoluminescence from localized states in disordered indium nitride,” Appl. Phys. Lett. 93(2), 021113 (2008). [CrossRef]

Appl. Phys. Lett.

• J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, “Unusual properties of the fundamental band gap of InN,” Appl. Phys. Lett. 80(21), 3967–3969 (2002). [CrossRef]
• D. C. Look, H. Lu, W. J. Schaff, J. Jasinski, and Z. Liliental-Weber, “Donor and acceptor concentrations in degenerate InN,” Appl. Phys. Lett. 80(2), 258–260 (2002). [CrossRef]
• C. H. Shen, H. Y. Chen, H.-W. Lin, S. Gwo, A. A. Klochikhin, and V. Y. Davydov, “Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer,” Appl. Phys. Lett. 88(25), 253104 (2006). [CrossRef]
• C. L. Hsiao, H. C. Hsu, L. C. Chen, C. T. Wu, C. W. Chen, M. Chen, L. W. Tu, and K. H. Chen, “Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors,” Appl. Phys. Lett. 91(18), 181912 (2007). [CrossRef]
• I. Mora-Seró, F. Fabregat-Santiago, B. Denier, J. Bisquert, R. Tena-Zaera, J. Elias, and C. Lévy-Clément, “Determination of carrier density of ZnO nanowires by electrochemical techniques,” Appl. Phys. Lett. 89(20), 203117 (2006). [CrossRef]
• J. Wu, W. Walukiewicz, S. X. Li, R. Armitage, J. C. Ho, E. R. Weber, E. E. Haller, H. Lu, W. J. Schaff, A. Barcz, and R. Jakiela, “Effects of electron concentration on the optical absorption edge of InN,” Appl. Phys. Lett. 84(15), 2805–2807 (2004). [CrossRef]
• B. Bansal, A. Kadir, A. Bhattacharya, and V. V. Moshchalkov, “Photoluminescence from localized states in disordered indium nitride,” Appl. Phys. Lett. 93(2), 021113 (2008). [CrossRef]

J. Appl. Phys.

• V. Lebedev, V. Climalla, T. Baumann, and O. Ambacher, “Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network,” J. Appl. Phys. 100(9), 094903 (2006). [CrossRef]
• D. S. Jiang, Y. Makita, K. Ploog, and H. J. Queisser, “Electrical-properties and photo-luminescence of Te- doped GaAs grown by molecular-beam-epitaxy,” J. Appl. Phys. 53(2), 999–1006 (1982). [CrossRef]
• S. Z. Wang, S. F. Yoon, Y. X. Xia, and S. W. Xie, “20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source,” J. Appl. Phys. 95(12), 7998–8001 (2004). [CrossRef]
• J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, S. X. Li, E. E. Haller, H. Lu, and W. J. Schaff, “Temperature dependence of the fundamental band gap of InN,” J. Appl. Phys. 94(7), 4457–4460 (2003). [CrossRef]
• T. L. Tansley and C. P. Foley, “Optical band-gap of indium nitride,” J. Appl. Phys. 59(9), 3241–3244 (1986). [CrossRef]

J. Phys.

• A. Raymond, J. L. Robert, and C. Bernard, “Electron effective mass in heavily doped GaAs,” J. Phys. 12, 2289–2293 (1979).

J. Phys. Chem. A

• J. T. Chen, C. L. Hsiao, H. C. Hsu, C. T. Wu, C. L. Yeh, P. C. Wei, L. C. Chen, and K. H. Chen, “Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source,” J. Phys. Chem. A 111(29), 6755–6759 (2007). [CrossRef] [PubMed]

Nano Lett.

• T. Stoica, R. J. Meijers, R. Calarco, T. Richter, E. Sutter, and H. Lüth, “Photoluminescence and intrinsic properties of MBE-grown InN nanowires,” Nano Lett. 6(7), 1541–1547 (2006). [CrossRef] [PubMed]

Phys. Rev. B

• C. Stampfl, C. G. Van de Walle, D. Vogel, P. Krüger, and J. Pollmann, “Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials,” Phys. Rev. B 61(12), R7846–R7849 (2000). [CrossRef]
• B. Arnaudov, T. Paskova, P. P. Paskov, B. Magnusson, E. Valcheva, B. Monemar, H. Lu, W. J. Schaff, H. Amano, and I. Akasaki, “Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels,” Phys. Rev. B 69(11), 115216 (2004). [CrossRef]
• J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Effects of the narrow band gap on the properties of InN,” Phys. Rev. B 66(20), R201403 (2002). [CrossRef]
• E. S. Koteles and W. R. Datars, “Temperature-dependence of electron on effective mass in InSb,” Phys. Rev. B 9(2), 568–571 (1974). [CrossRef]
• H. Yokoi, S. Takeyama, and N. Miura, “Anomalous temperature-dependence of the effective mass in n-type PbTe,” Phys. Rev. B 44(12), 6519–6522 (1991). [CrossRef]
• L. F. J. Piper, T. D. Veal, I. Mahboob, and C. F. McConville, “Temperature invariance of InN electron accumulation,” Phys. Rev. B 70(11), 115333 (2004). [CrossRef]

Phys. Status Solidi B

• V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, D. A. Kurdyukov, S. V. Ivanov, V. A. Vekshin, F. Bechstedt, J. Furthmüller, J. Aderhold, J. Graul, A. V. Mudryi, H. Harima, A. Hashimoto, A. Yamamoto, and E. E. Haller, “Band Gap of Hexagonal InN and InGaN Alloys,” Phys. Status Solidi B 234, 787–795 (2002). [CrossRef]
• V. Y. Davydov, A. A. Klochikhin, R. P. Seisiyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Grual, “Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap,” Phys. Status Solidi B 229, R1–R3 (2002). [CrossRef]

Physica

• Y. P. Varshni, “Temperature dependence of energy gap in semiconductors,” Physica 34(1), 149–154 (1967). [CrossRef]

Semicond. Sci. Technol.

• S. P. Fu, T. T. Chen, and Y. F. Chen, “Photoluminescent properties of InN epifilms,” Semicond. Sci. Technol. 21(3), 244–249 (2006). [CrossRef]

Click here to see a list of articles that cite this paper

Related Journal Articles

• Isolated single quantum dot emitters in all-epitaxial microcavities (OL)
• Silver and potassium ion-exchanged waveguides in glasses doped with PbS semiconductor quantum dots (JOSAB)
• Analysis on fluorescence intensity reverse photonic phenomenon between red and green fluorescence of oxyfluoride nanophase vitroceramics (OE)
• Silicon nanoporous pillar array: a silicon hierarchical structure with high light absorption and triple-band photoluminescence (OE)
• Polarized photoluminescence from single GaN nanorods: Effects of optical confinement (OE)

Related Conference Papers

• Electronic and Optical Properties of Self-Assembled InN/GaN Quantum Dots
• Charge separation of dense 2D electron-hole gases: Cold exciton ring pattern formation
• Photoluminescence of GaInAsP/InP Single Quantum Wires with Lateral Widths down to 6 nm Fabricated by Dry Etching and Regrowth
• Probing Photophysics of Individual Quantum Dot/Organic Hybrid Nanostructures
• Spatial Wavelength-Tunable Emission between 350 nm and 715 nm from Nanowires on a Single Substrate