Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits

doi:10.1364/OE.17.012564

Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits

Tadashi Okumura, Munetaka Kurokawa, Mizuki Shirao, Daisuke Kondo, Hitomi Ito, Nobuhiko Nishiyama, Takeo Maruyama, and Shigehisa Arai »View Author Affiliations

Optics Express, Vol. 17, Issue 15, pp. 12564-12570 (2009)
http://dx.doi.org/10.1364/OE.17.012564

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Abstract

A room-temperature pulsed operation was demonstrated using lateral current injection-type lasers composed of a 400-nm-thick GaInAsP core layer with compressively strained 5 quantum wells. A threshold current of 105 mA and corresponding density of 1.3 kA/cm² (260 A/cm² per well) were obtained with the stripe width of 5.4 µm and the cavity length of 1.47 mm. A fundamental transverse mode operation was obtained with the narrower stripe device of 2.0 µm and the cavity length of 805 µm, while the threshold current and corresponding density were 49 mA and 3.0 kA/cm², respectively.

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: April 29, 2009
Revised Manuscript: June 24, 2009
Manuscript Accepted: July 4, 2009
Published: July 20, 2009

Citation
Tadashi Okumura, Munetaka Kurokawa, Mizuki Shirao, Daisuke Kondo, Hitomi Ito, Nobuhiko Nishiyama, Takeo Maruyama, and Shigehisa Arai, "Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits," Opt. Express 17, 12564-12570 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-15-12564

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References

P. Kapur, J. P. McVittie, and K. C. Saraswat, “Technology and reliability constrained future copper interconnects—Part I: Resistance modeling,” Trans. Electron Devices. 49(4), 590–597 (2002). [CrossRef]
P. Kapur, G. Chandra, J. P. McVittie, and K. C. Saraswat, “Technology and reliability constrained future copper interconnects.II. Performance implications,” Trans. Electron Devices. 49(4), 598–604 (2002). [CrossRef]
D. A. B. Miller, “Rationale and challenges for optical interconnects to electronic chips,” Proc. IEEE 88(6), 728–749 (2000). [CrossRef]
G. Chen, H. Chen, M. Haurylau, N. A. Nelson, D. H. Albonesi, P. M. Fauchet, and E. G. Friedman, ““Prediction of CMOS compatible on-chip optical interconnect,” Integr,” VLSI J. 40(4), 434–446 (2007). [CrossRef]
R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, D. Lambert, A. Chen, V. Dominic, A. Mathur, P. Chavarkar, M. Missey, A. Dentai, S. Hurtt, J. Bäck, R. Muthiah, S. Murthy, R. Salvatore, S. Grubb, C. Joyner, J. Rossi, R. Schneider, M. Ziari, F. Kish, and D. Welch, “Single-chip 40-channel InP transmitter photonic integrated circuit capable of aggregate data rate of 1.6 Tbit/s,” Electron. Lett. 42(13), 771–772 (2006). [CrossRef]
M. Fujita, R. Ushigome, and T. Baba, “Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 μA,” Electron. Lett. 36(9), 790–791 (2000). [CrossRef]
O. Painter, R. K. Lee, A. Scherer, A. Yariv, J. D. O’Brien, P. D. Dapkus, and I. Kim, “Two-dimensional photonic band-Gap defect mode laser,” Science 284(5421), 1819–1821 (1999). [CrossRef] [PubMed]
H.-G. Park, S.-H. Kim, S.-H. Kwon, Y.-G. Ju, J.-K. Yang, J. H. Baek, S.-B. Kim, and Y.-H. Lee, “Electrically driven single-cell photonic crystal laser,” Science 305(5689), 1444–1447 (2004). [CrossRef] [PubMed]
C. Seassal, C. Monat, J. Mouette, E. Touraille, B. B. Bakir, H. T. Hattori, J.-L. Leclercq, X. Letartre, P. Rojo-Romeo, and P. Viktorovitch, “InP bonded membrane photonic components and ciricuits: Toward 2.5 dimentional micro-nano-photonics,” IEEE J. Sel. Top. Quantum Electron. 11(2), 395–407 (2005). [CrossRef]
T. Okamoto, N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura, and S. Arai, “Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1361–1366 (2003). [CrossRef]
N. Nunoya, M. Nakamura, M. Morshed, S. Tamura, and S. Arai, “High-performance 1.55-μm wavelength GaInAsP-InP Distributed-Feedback Lasers with wirelike active regions,” IEEE J. Sel. Top. Quantum Electron. 7(2), 249–258 (2001). [CrossRef]
S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, and S. Arai, “Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1135–1141 (2007). [CrossRef]
H. Naitoh, S. Sakamoto, M. Ohtake, T. Okumura, T. Maruyama, N. Nishiyama, and S. Arai, “GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure,” Jpn. J. Appl. Phys. 46(47), L1158–L1160 (2007). [CrossRef]
T. Maruyama, T. Okumura, S. Sakamoto, K. Miura, Y. Nishimoto, and S. Arai, “GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate,” Opt. Express 14(18), 8184–8188 (2006). [CrossRef] [PubMed]
T. Okumura, T. Maruyama, M. Kanemaru, S. Sakamoto, and S. Arai, “Single-mode operation of GaInAsP/InP- membrane distributed feedback lasers bonded on silicon-on-insulator substrate with rib-waveguide structure,” Jpn. J. Appl. Phys. 46(48), L1206–L1208 (2007). [CrossRef]
H. Namizaki, H. Kan, M. Ishii, and A. Ito, “Transverse-junction-stripe-geometry double-heterostructure lasers with very low threshold current,” J. Appl. Phys. 45(6), 2785–2786 (1974). [CrossRef]
K. Oe, Y. Noguchi, and C. Caneau, “GaInAsP lateral current injection lasers on semi-insulating substrate,” IEEE Photon. Technol. Lett. 6(4), 479–481 (1994). [CrossRef]
E. H. Sargent, K. Oe, C. Caneau, and J. M. Xu, “OEIC-enabling LCI lasers with current guides: Combined theoretical-experimental investigation of internal operating mechanisms,” IEEE J. Quantum Electron. 34(7), 1280–1287 (1998). [CrossRef]
M. Aoki, H. Sano, M. Suzuki, M. Takahashi, K. Uomi, and A. Takai, “Novel structure MQW electroabsorption-modulator/DFB-laser integrated device fabricated by selective area MOCVD growth,” Electron. Lett. 27(23), 2138–2140 (1991). [CrossRef]

Albonesi, D. H.
Aoki, M.
Arai, S.
Baba, T.
Bäck, J.
Baek, J. H.
Bakir, B. B.
Caneau, C.
Chandra, G.
Chavarkar, P.
Chen, A.
Chen, G.
Chen, H.
Dapkus, P. D.
Dentai, A.
Dominic, V.
Evans, P.
Fauchet, P. M.
Friedman, E. G.
Fujita, M.
Grubb, S.
Hattori, H. T.
Haurylau, M.
Hurtt, S.
Ishii, M.
Ito, A.
Joyner, C.
Ju, Y.-G.
Kan, H.
Kanemaru, M.
Kapur, P.
Kato, M.
Kim, I.
Kim, S.-B.
Kim, S.-H.
Kish, F.
Kwon, S.-H.
Lambert, D.
Leclercq, J.-L.
Lee, R. K.
Lee, Y.-H.
Letartre, X.
Maruyama, T.
Mathur, A.
McVittie, J. P.
Miller, D. A. B.
Missey, M.
Miura, K.
Monat, C.
Morshed, M.
Mouette, J.
Murthy, S.
Muthiah, R.
Nagarajan, R.
Naitoh, H.
Nakamura, M.
Namizaki, H.
Nelson, N. A.
Nishimoto, Y.
Nishiyama, N.
Noguchi, Y.
Nunoya, N.
O’Brien, J. D.
Oe, K.
Ohtake, M.
Okamoto, T.
Okumura, T.
Onodera, Y.
Painter, O.
Park, H.-G.
Pleumeekers, J.
Rojo-Romeo, P.
Rossi, J.
Sakamoto, S.
Salvatore, R.
Sano, H.
Saraswat, K. C.
Sargent, E. H.
Scherer, A.
Schneider, R.
Seassal, C.
Suzuki, M.
Takahashi, M.
Takai, A.
Tamura, S.
Touraille, E.
Uomi, K.
Ushigome, R.
Viktorovitch, P.
Welch, D.
Xu, J. M.
Yamazaki, T.
Yang, J.-K.
Yariv, A.
Ziari, M.

Electron. Lett.

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, D. Lambert, A. Chen, V. Dominic, A. Mathur, P. Chavarkar, M. Missey, A. Dentai, S. Hurtt, J. Bäck, R. Muthiah, S. Murthy, R. Salvatore, S. Grubb, C. Joyner, J. Rossi, R. Schneider, M. Ziari, F. Kish, and D. Welch, “Single-chip 40-channel InP transmitter photonic integrated circuit capable of aggregate data rate of 1.6 Tbit/s,” Electron. Lett. 42(13), 771–772 (2006). [CrossRef]
M. Fujita, R. Ushigome, and T. Baba, “Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 μA,” Electron. Lett. 36(9), 790–791 (2000). [CrossRef]
M. Aoki, H. Sano, M. Suzuki, M. Takahashi, K. Uomi, and A. Takai, “Novel structure MQW electroabsorption-modulator/DFB-laser integrated device fabricated by selective area MOCVD growth,” Electron. Lett. 27(23), 2138–2140 (1991). [CrossRef]

IEEE J. Quantum Electron.

E. H. Sargent, K. Oe, C. Caneau, and J. M. Xu, “OEIC-enabling LCI lasers with current guides: Combined theoretical-experimental investigation of internal operating mechanisms,” IEEE J. Quantum Electron. 34(7), 1280–1287 (1998). [CrossRef]

IEEE J. Sel. Top. Quantum Electron.

C. Seassal, C. Monat, J. Mouette, E. Touraille, B. B. Bakir, H. T. Hattori, J.-L. Leclercq, X. Letartre, P. Rojo-Romeo, and P. Viktorovitch, “InP bonded membrane photonic components and ciricuits: Toward 2.5 dimentional micro-nano-photonics,” IEEE J. Sel. Top. Quantum Electron. 11(2), 395–407 (2005). [CrossRef]
T. Okamoto, N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura, and S. Arai, “Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1361–1366 (2003). [CrossRef]
N. Nunoya, M. Nakamura, M. Morshed, S. Tamura, and S. Arai, “High-performance 1.55-μm wavelength GaInAsP-InP Distributed-Feedback Lasers with wirelike active regions,” IEEE J. Sel. Top. Quantum Electron. 7(2), 249–258 (2001). [CrossRef]
S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, and S. Arai, “Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1135–1141 (2007). [CrossRef]

IEEE Photon. Technol. Lett.

K. Oe, Y. Noguchi, and C. Caneau, “GaInAsP lateral current injection lasers on semi-insulating substrate,” IEEE Photon. Technol. Lett. 6(4), 479–481 (1994). [CrossRef]

J. Appl. Phys.

H. Namizaki, H. Kan, M. Ishii, and A. Ito, “Transverse-junction-stripe-geometry double-heterostructure lasers with very low threshold current,” J. Appl. Phys. 45(6), 2785–2786 (1974). [CrossRef]

Jpn. J. Appl. Phys.

T. Okumura, T. Maruyama, M. Kanemaru, S. Sakamoto, and S. Arai, “Single-mode operation of GaInAsP/InP- membrane distributed feedback lasers bonded on silicon-on-insulator substrate with rib-waveguide structure,” Jpn. J. Appl. Phys. 46(48), L1206–L1208 (2007). [CrossRef]
H. Naitoh, S. Sakamoto, M. Ohtake, T. Okumura, T. Maruyama, N. Nishiyama, and S. Arai, “GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure,” Jpn. J. Appl. Phys. 46(47), L1158–L1160 (2007). [CrossRef]

Opt. Express

T. Maruyama, T. Okumura, S. Sakamoto, K. Miura, Y. Nishimoto, and S. Arai, “GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate,” Opt. Express 14(18), 8184–8188 (2006). [CrossRef] [PubMed]

Proc. IEEE

D. A. B. Miller, “Rationale and challenges for optical interconnects to electronic chips,” Proc. IEEE 88(6), 728–749 (2000). [CrossRef]

Science

O. Painter, R. K. Lee, A. Scherer, A. Yariv, J. D. O’Brien, P. D. Dapkus, and I. Kim, “Two-dimensional photonic band-Gap defect mode laser,” Science 284(5421), 1819–1821 (1999). [CrossRef] [PubMed]
H.-G. Park, S.-H. Kim, S.-H. Kwon, Y.-G. Ju, J.-K. Yang, J. H. Baek, S.-B. Kim, and Y.-H. Lee, “Electrically driven single-cell photonic crystal laser,” Science 305(5689), 1444–1447 (2004). [CrossRef] [PubMed]

Trans. Electron Devices.

P. Kapur, J. P. McVittie, and K. C. Saraswat, “Technology and reliability constrained future copper interconnects—Part I: Resistance modeling,” Trans. Electron Devices. 49(4), 590–597 (2002). [CrossRef]
P. Kapur, G. Chandra, J. P. McVittie, and K. C. Saraswat, “Technology and reliability constrained future copper interconnects.II. Performance implications,” Trans. Electron Devices. 49(4), 598–604 (2002). [CrossRef]

VLSI J.

G. Chen, H. Chen, M. Haurylau, N. A. Nelson, D. H. Albonesi, P. M. Fauchet, and E. G. Friedman, ““Prediction of CMOS compatible on-chip optical interconnect,” Integr,” VLSI J. 40(4), 434–446 (2007). [CrossRef]

2007, Chen, VLSI J.
2007, Sakamoto, IEEE J. Sel. Top. Quantum Electron.
2007, Naitoh, Jpn. J. Appl. Phys.
2007, Okumura, Jpn. J. Appl. Phys.
2006, Maruyama, Opt. Express
2006, Nagarajan, Electron. Lett.
2005, Seassal, IEEE J. Sel. Top. Quantum Electron.
2004, Park, Science
2003, Okamoto, IEEE J. Sel. Top. Quantum Electron.
2002, Kapur, Trans. Electron Devices.
2002, Kapur, Trans. Electron Devices.
2001, Nunoya, IEEE J. Sel. Top. Quantum Electron.
2000, Miller, Proc. IEEE
2000, Fujita, Electron. Lett.
1999, Painter, Science
1998, Sargent, IEEE J. Quantum Electron.
1994, Oe, IEEE Photon. Technol. Lett.
1991, Aoki, Electron. Lett.
1974, Namizaki, J. Appl. Phys.

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