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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 15 — Jul. 20, 2009
  • pp: 12564–12570

Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits

Tadashi Okumura, Munetaka Kurokawa, Mizuki Shirao, Daisuke Kondo, Hitomi Ito, Nobuhiko Nishiyama, Takeo Maruyama, and Shigehisa Arai  »View Author Affiliations


Optics Express, Vol. 17, Issue 15, pp. 12564-12570 (2009)
http://dx.doi.org/10.1364/OE.17.012564


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Abstract

A room-temperature pulsed operation was demonstrated using lateral current injection-type lasers composed of a 400-nm-thick GaInAsP core layer with compressively strained 5 quantum wells. A threshold current of 105 mA and corresponding density of 1.3 kA/cm2 (260 A/cm2 per well) were obtained with the stripe width of 5.4 µm and the cavity length of 1.47 mm. A fundamental transverse mode operation was obtained with the narrower stripe device of 2.0 µm and the cavity length of 805 µm, while the threshold current and corresponding density were 49 mA and 3.0 kA/cm2, respectively.

© 2009 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: April 29, 2009
Revised Manuscript: June 24, 2009
Manuscript Accepted: July 4, 2009
Published: July 20, 2009

Citation
Tadashi Okumura, Munetaka Kurokawa, Mizuki Shirao, Daisuke Kondo, Hitomi Ito, Nobuhiko Nishiyama, Takeo Maruyama, and Shigehisa Arai, "Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits," Opt. Express 17, 12564-12570 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-15-12564


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