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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 16 — Aug. 3, 2009
  • pp: 13747–13757

Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures

Yik-Khoon Ee, Pisist Kumnorkaew, Ronald A. Arif, Hua Tong, James F. Gilchrist, and Nelson Tansu  »View Author Affiliations


Optics Express, Vol. 17, Issue 16, pp. 13747-13757 (2009)
http://dx.doi.org/10.1364/OE.17.013747


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Abstract

Improvement of light extraction efficiency of InGaN light emitting diodes (LEDs) using polydimethylsiloxane (PDMS) concave microstructures arrays was demonstrated. The size effect of the concave microstructures on the light extraction efficiency of III-Nitride LEDs was studied. Depending on the size of the concave microstructures, ray tracing simulations show that the use of PDMS concave microstructures arrays can lead to increase in light extraction efficiency of InGaN LEDs by 1.5 to 2.0 times. Experiments utilizing 2.0 micro n thick PDMS with 1.0 micron diameter of the PDMS concave microstructures arrays demonstrated 1.70 times improvement in light extraction efficiency, which is consistent with improvement of 1.77 times predicted from simulation. The enhancement in light extraction efficiency is attributed to increase in effective photon escape cone due to PDMS concave microstructures arrays.

© 2009 OSA

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

History
Original Manuscript: April 1, 2009
Revised Manuscript: July 20, 2009
Manuscript Accepted: July 21, 2009
Published: July 24, 2009

Citation
Yik-Khoon Ee, Pisist Kumnorkaew, Ronald A. Arif, Hua Tong, James F. Gilchrist, and Nelson Tansu, "Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures," Opt. Express 17, 13747-13757 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-16-13747


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