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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 16 — Aug. 3, 2009
  • pp: 14426–14433

Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si

Xiangyang Ma, Jingwei Pan, Peiliang Chen, Dongsheng Li, Hui Zhang, Yang Yang, and Deren Yang  »View Author Affiliations

Optics Express, Vol. 17, Issue 16, pp. 14426-14433 (2009)

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We report the electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si. Metal-insulator-semiconductor structures in a form of Au/SiO2/ZnO-nanorod-array were fabricated on Si. Such devices exhibit random lasing when the Au electrode is applied with a sufficiently high positive voltage. In this context, in the region adjacent to SiO2/ZnO-nanorod-array interface, stimulated emission from ZnO occurs due to population inversion and, moreover, light is scattered by the nanorods and SiO2 films. Therefore, random lasing proceeds due to optical gain achieved by the stimulated emission and multiple scattering.

© 2009 OSA

OCIS Codes
(140.3610) Lasers and laser optics : Lasers, ultraviolet
(290.5890) Scattering : Scattering, stimulated
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: June 18, 2009
Revised Manuscript: July 11, 2009
Manuscript Accepted: July 18, 2009
Published: July 31, 2009

Xiangyang Ma, Jingwei Pan, Peiliang Chen, Dongsheng Li, Hui Zhang, Yang Yang, and Deren Yang, "Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si," Opt. Express 17, 14426-14433 (2009)

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