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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 17, Iss. 17 — Aug. 17, 2009
  • pp: 14458–14465

An opto-electro-mechanical infrared photon detector with high internal gain at room temperature

John Kohoutek, Ivy Yoke Leng Wan, Omer Gokalp Memis, and Hooman Mohseni  »View Author Affiliations

Optics Express, Vol. 17, Issue 17, pp. 14458-14465 (2009)

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Many applications require detectors with both high sensitivity and linearity, such as low light level imaging and quantum computing. Here we present an opto-electro-mechanical detector based on nano-injection and lateral charge compression that operates at the short infrared (SWIR) range. Electrical signal is generated by photo-induced changes in a nano-injector gap, and subsequent change of tunneling current. We present a theoretical model developed for the OEM detector, and it shows good agreement with the measured experimental results for both the mechanical and electrical properties of the device. The device shows a measured responsivity of 276 A/W, equivalent to 220 electrons per incoming photon, and an NEP of 3.53 × 10−14 W/Hz0.5 at room temperature. Although these results are already competing with common APDs in linear mode, we believe replacing the AFM tip with a dedicated nanoinjector can improve the sensitivity significantly.

© 2009 OSA

OCIS Codes
(040.3780) Detectors : Low light level
(230.5160) Optical devices : Photodetectors
(230.4685) Optical devices : Optical microelectromechanical devices

ToC Category:

Original Manuscript: May 5, 2009
Revised Manuscript: July 16, 2009
Manuscript Accepted: July 18, 2009
Published: August 3, 2009

John Kohoutek, Ivy Yoke Leng Wan, Omer Gokalp Memis, and Hooman Mohseni, "An opto-electro-mechanical infrared photon detector with high internal gain at room temperature," Opt. Express 17, 14458-14465 (2009)

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