High-modulation efficiency silicon Mach-Zehnder optical modulator based on carrier depletion in a PN Diode
Optics Express, Vol. 17, Issue 18, pp. 15520-15524 (2009)
http://dx.doi.org/10.1364/OE.17.015520
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Abstract
We present a high phase-shift efficienct Mach-Zehnder silicon optical modulator based on the carrier-depletion effect in a highly-doped PN diode with a small waveguide cross-sectional area. The fabricated modulator show a VπLπ of 1.8V·cm and phase shifter loss of 4.4dB/mm. A device using a 750 μm-long phase-shifter exhibits an eye opening at 12.5Gbps with an extinction ratio of 3 dB. Also, an extinction ratio of 7 dB is achieved at 4 Gbps for a device with a 2 mm-long phase shifter. Further enhancement of the extinction ratio at higher operating speed can be achieved using a travelling-wave electrode design and the optimal doping.
© 2009 OSA
OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(250.7360) Optoelectronics : Waveguide modulators
ToC Category:
Optoelectronics
History
Original Manuscript: June 3, 2009
Revised Manuscript: August 7, 2009
Manuscript Accepted: August 11, 2009
Published: August 18, 2009
Citation
Jeong Woo Park, Jong-Bum You, In Gyoo Kim, and Gyungock Kim, "High-modulation efficiency silicon Mach-Zehnder optical modulator based on carrier depletion in a PN Diode," Opt. Express 17, 15520-15524 (2009)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-17-18-15520
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References
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